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R1LP0408CSB-7LI PDF预览

R1LP0408CSB-7LI

更新时间: 2024-09-15 22:10:03
品牌 Logo 应用领域
日立 - HITACHI 静态存储器
页数 文件大小 规格书
14页 79K
描述
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)

R1LP0408CSB-7LI 数据手册

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R1LP0408C-I Series  
Wide Temperature Range Version  
4 M SRAM (512-kword × 8-bit)  
REJ03C0067-0100Z  
Rev. 1.00  
Aug.01.2003  
Description  
The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized  
higher density, higher performance and low power consumption by employing CMOS process technology  
(6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation;  
therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II.  
Features  
Single 5 V supply: 5 V ± 10%  
Access time: 55/70 ns (max)  
Power dissipation:  
Active: 10 mW/MHz (typ)  
Standby: 4 µW (typ)  
Completely static memory.  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output.  
Three state output  
Directly TTL compatible.  
All inputs and outputs  
Battery backup operation.  
Operating temperature: 40 to +85°C  
Rev.1.00, Aug.01.2003, page 1 of 13  

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