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R1LP5256ESA-5SI#S0 PDF预览

R1LP5256ESA-5SI#S0

更新时间: 2024-11-06 14:44:23
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 336K
描述
256Kb Advanced LPSRAM (32k word x 8bit)

R1LP5256ESA-5SI#S0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP(1)
包装说明:8 X 13.40 MM, PLASTIC, TSOP-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41Factory Lead Time:1 week
风险等级:5.63最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e2内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:2功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified最大待机电流:0.000002 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.035 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Copper (Sn/Cu)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

R1LP5256ESA-5SI#S0 数据手册

 浏览型号R1LP5256ESA-5SI#S0的Datasheet PDF文件第2页浏览型号R1LP5256ESA-5SI#S0的Datasheet PDF文件第3页浏览型号R1LP5256ESA-5SI#S0的Datasheet PDF文件第4页浏览型号R1LP5256ESA-5SI#S0的Datasheet PDF文件第5页浏览型号R1LP5256ESA-5SI#S0的Datasheet PDF文件第6页浏览型号R1LP5256ESA-5SI#S0的Datasheet PDF文件第7页 
R1LP5256E Series  
256Kb Advanced LPSRAM (32k word x 8bit)  
R10DS0268EJ0200  
Rev.2.00  
2019.10.29  
Description  
The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated  
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP5256E Series has realized higher  
density, higher performance and low power consumption. The R1LP5256E Series is suitable for memory applications  
where a simple interfacing, battery operating and battery backup are the important design objectives. It has been  
packaged in 28-pin SOP and 28-pin TSOP.  
Features  
Single 4.5V~5.5V power supply  
Small stand-by current: 0.6µA (5.0V, typical)  
No clocks, No refresh  
All inputs and outputs are TTL compatible.  
Easy memory expansion by CS#  
Common Data I/O  
Three-state outputs: OR-tie Capability  
OE# prevents data contention on the I/O bus  
Ordering Information  
Access  
time  
Temperature  
range  
Orderable part name  
Package  
Shipping container  
Tube (Magazine)  
Embossed tape  
Tray  
R1LP5256ESP-5SI#B  
R1LP5256ESP-5SI#S  
R1LP5256ESA-5SI#B  
R1LP5256ESA-5SI#S  
*
*
*
*
450-mil 28-pin  
plastic SOP  
55 ns  
-40 ~ +85°C  
8mm×13.4mm 28-pin  
plastic TSOP  
Embossed tape  
Note 1. = Revision code for Assembly site change, etc. (= 0, 1, etc.)  
R10DS0268EJ0200 Rev.2.00  
2019.10.29  
Page 1 of  
11  

R1LP5256ESA-5SI#S0 替代型号

型号 品牌 替代类型 描述 数据表
R1LP5256ESA-5SI#B0 RENESAS

完全替代

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SI RENESAS

功能相似

IC,SRAM,32KX8,CMOS,TSSOP,28PIN,PLASTIC

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