5秒后页面跳转
R1LP5256ESA-5SI PDF预览

R1LP5256ESA-5SI

更新时间: 2024-11-06 19:51:39
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 285K
描述
IC,SRAM,32KX8,CMOS,TSSOP,28PIN,PLASTIC

R1LP5256ESA-5SI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOP, TSSOP28,.53,22
Reach Compliance Code:compliant风险等级:5.63
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e2
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:2
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
最大待机电流:0.000002 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Copper (Sn/Cu)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

R1LP5256ESA-5SI 数据手册

 浏览型号R1LP5256ESA-5SI的Datasheet PDF文件第2页浏览型号R1LP5256ESA-5SI的Datasheet PDF文件第3页浏览型号R1LP5256ESA-5SI的Datasheet PDF文件第4页浏览型号R1LP5256ESA-5SI的Datasheet PDF文件第5页浏览型号R1LP5256ESA-5SI的Datasheet PDF文件第6页浏览型号R1LP5256ESA-5SI的Datasheet PDF文件第7页 
Specifications in this document are tentative and may be subject to change.  
R1LP5256E Series  
256Kb Advanced LPSRAM (32k word x 8bit)  
R10DS0070EJ0001  
Rev.0.01  
2010.12.09  
Description  
The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated  
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP5256E Series has realized higher  
density, higher performance and low power consumption. The R1LP5256E Series is suitable for memory applications  
where a simple interfacing, battery operating and battery backup are the important design objectives. It has been  
packaged in 28-pin SOP and 28-pin TSOP.  
Features  
Single 4.5V~5.5V power supply  
Small stand-by current: 1µA (5.0V, typical)  
No clocks, No refresh  
All inputs and outputs are TTL compatible.  
Easy memory expansion by CS#  
Common Data I/O  
Three-state outputs: OR-tie Capability  
OE# prevents data contention on the I/O bus  
Ordering Information  
Type No.  
Access time  
55 ns  
Package  
R1LP5256ESP-5S%  
R1LP5256ESP-7S%  
R1LP5256ESA-5S%  
R1LP5256ESA-7S%  
450-mil 28-pin plastic SOP  
(normal-bend type) (28P2W)  
70 ns  
55 ns  
70 ns  
8mm×13.4mm 28-pin plastic TSOP  
(normal-bend type) (28P2C)  
% - Temperature version; see table below  
%
R
I
Temperature Range  
0 ~ +70°C  
-40 ~ +85°C  
R10DS0070EJ0001 Rev.0.01  
2010.12.09  
Page 1 of  
1

R1LP5256ESA-5SI 替代型号

型号 品牌 替代类型 描述 数据表
R1LP5256ESA-5SI#S0 RENESAS

功能相似

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SI#B0 RENESAS

功能相似

256Kb Advanced LPSRAM (32k word x 8bit)

与R1LP5256ESA-5SI相关器件

型号 品牌 获取价格 描述 数据表
R1LP5256ESA-5SI#B0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SI#S0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SI#S1 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SI-B0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SI-S0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SR-B0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-5SR-S0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-7SI-B0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-7SI-S0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)
R1LP5256ESA-7SR-B0 RENESAS

获取价格

256Kb Advanced LPSRAM (32k word x 8bit)