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R1LP0408CSP-5SC PDF预览

R1LP0408CSP-5SC

更新时间: 2024-09-15 22:10:03
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
14页 93K
描述
4M SRAM (512-kword 】 8-bit)

R1LP0408CSP-5SC 数据手册

 浏览型号R1LP0408CSP-5SC的Datasheet PDF文件第2页浏览型号R1LP0408CSP-5SC的Datasheet PDF文件第3页浏览型号R1LP0408CSP-5SC的Datasheet PDF文件第4页浏览型号R1LP0408CSP-5SC的Datasheet PDF文件第5页浏览型号R1LP0408CSP-5SC的Datasheet PDF文件第6页浏览型号R1LP0408CSP-5SC的Datasheet PDF文件第7页 
R1LP0408C-C Series  
4M SRAM (512-kword × 8-bit)  
REJ03C0077-0200Z  
Rev. 2.00  
May.26.2004  
Description  
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has  
realized higher density, higher performance and low power consumption by employing CMOS process  
technology (6-transistor memory cell). The R1LP0408C-C Series offers low power standby power  
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin  
TSOP II.  
Features  
Single 5 V supply: 5 V 10%  
Access time: 55/70 ns (max)  
Power dissipation:  
Active: 10 mW/MHz (typ)  
Standby: 4 µW (typ)  
Completely static memory.  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output.  
Three state output  
Directly TTL compatible.  
All inputs and outputs  
Battery backup operation.  
Operating temperature: 20 to +70°C  
Rev.2.00, May.26.2004, page 1 of 12  

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