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QSBT40_08 PDF预览

QSBT40_08

更新时间： 2024-09-18 12:20:07
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 106K
描述
QUAD DATA LINE SCHOTTKY BUS TERMINATOR

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中文翻译

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QSBT40_08 数据手册

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QSBT40  
QUAD DATA LINE SCHOTTKY BUS TERMINATOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
Low Forward Voltage Drop  
Fast Switching  
Very High Density  
Ultra-Small Surface Mount Package PN Junction Guard Ring  
for Transient and ESD Protection  
Provide Transient Protection for High-Speed Data Lines in  
Accordance With:  
IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)  
IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)  
IEC61000-4-5 (Lightning) Class 3  
•
•
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208  
•
•
•
•
•
•
•
Polarity: See Diagram  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.006 grams (approximate)  
•
•
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 3 and 4)  
VCC  
DL2  
DL1  
DL4 GND  
DL3  
Top View  
Device Schematic  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
VRRM  
VRWM  
VR  
Value  
Unit  
30  
V
Forward Continuous Current  
(Note 1)  
200  
600  
mA  
mA  
IFM  
Non-Repetitive Peak Forward Surge Current  
@ t < 1.0s  
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
200  
Unit  
mW  
Power Dissipation  
(Note 1)  
(Note 1)  
Thermal Resistance Junction to Ambient Air  
Operating Temperature Range  
Storage Temperature Range  
625  
°C/W  
°C  
°C  
Rθ  
JA  
-55 to +125  
-65 to +125  
TJ  
TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Reverse Breakdown Voltage  
Symbol Min  
Typ  
Max  
Unit Test Condition  
IR = 100μA  
(Note 5)  
30  
V(BR)R  
⎯
V
⎯
IF = 0.1mA, tp < 300µS  
IF = 1.0mA, tp < 300µS  
IF = 10mA, tp < 300µS  
IF = 30mA, tp < 300µS  
IF = 100mA, tp < 300µS  
280  
350  
450  
550  
1000  
Forward Voltage  
VF  
⎯
⎯
⎯
mV  
Reverse Current  
(Note 5)  
2
IR  
⎯
⎯
μA  
VR = 25V  
VR = 0, f = 1.0MH (Note 6)  
VR = 0, f = 1.0MHZ (Note 7)  
10.0  
6.5  
Total Capacitance  
pF  
CT  
⎯
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100Ω  
Reverse Recovery Time  
5.0  
ns  
trr  
⎯
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. Short duration pulse test used to minimize self-heating effect.  
6. At VR = 0V, DL(X) to VCC or GND.  
7. At VR = 0V, between Data Lines (e.g., DL1 and DL4).  
1 of 3  
www.diodes.com  
May 2008  
© Diodes Incorporated  
QSBT40  
Document number: DS30195 Rev. 15 - 2  
123

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