Datasheet > QSBT40_1

QSBT40_1

更新时间： 2024-09-18 03:39:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	64K
描述
QUAD DATA LINE SCHOTTKY BUS TERMINATOR

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中文翻译

获取价格

数据手册

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QSBT40_1 数据手册

SPICE MODEL: QSBT40

QSBT40

QUAD DATA LINE SCHOTTKY BUS TERMINATOR

Lead-free

Features

Low Forward Voltage Drop

Fast Switching

SOT-363

Very High Density

Ultra-Small Surface Mount Package PN Junction Guard Ring

for Transient and ESD Protection

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

TOP VIEW

Provide transient protection for high-speed data lines in

accordance with:

IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)

IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)

IEC61000-4-5 (Lightning) Class 3

0.65 Nominal

0.30

1.80

0.40

2.20

0.10

1.00

0.40

0.25

8°

Lead Free/RoHS Compliant (Note 5)

Mechanical Data

Case: SOT-363

0.90

0.25

0.10

0°

Case material: Molded Plastic. UL Flammability

Classification Rating 94V-0

V_CC

DL2

DL1

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

All Dimensions in mm

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe). Please See Ordering Information, Note 7, on

Page 2

Polarity: See Diagram

DL4 GND

DL3

Marking Code: KST (See Page 2)

Weight: 0.006 grams (approx.)

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

I_FM

I_FSM

P_d

200

600

°C/W

°C

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t < 1.0s

Power Dissipation (Note 1)

200

R_qJA

T_j

Thermal Resistance Junction to Ambient Air (Note 1)

Operating Temperature Range

625

-55 to +125

-65 to +125

T_STG

Storage Temperature Range

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol Min

Typ

Max

Unit

Test Condition

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_R= 100mA

280

350

I_F= 0.1mA, tp < 300µS

I_F= 1.0mA, tp < 300µS

I_F= 10mA, tp < 300µS

I_F= 30mA, tp < 300µS

I_F= 100mA, tp < 300µS

V_F

Forward Voltage

450

550

1000

V_R= 25V

I_R

Reverse Current (Note 2)

Total Capacitance

V_R= 0, f = 1.0MHz (Note 3)

10.0

6.5

C_T

_R= 0, f = 1.0MH_Z(Note 4)

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100W

t_rr

Reverse Recovery Time

5.0

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. At V = 0V, DL(X) to V

or GND.

4. At V = 0V, between Data Lines (e.g., DL1 and DL4).

5. No purposefully added lead.

DS30195 Rev. 12 - 2

1 of 3

QSBT40

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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