Datasheet > QS8004DH2TP

QS8004DH2TP

更新时间： 2023-12-06 20:12:50

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压可控硅
页数	文件大小	规格书
7页	433K
描述
这款4安培过压开关集成了一个具有高压箝位功能的三端双向可控硅结构，以确保能够承受高过压事件，例如IEC 61000-4-5标准中描述的线路瞬变。这个双向固态开关系列旨在用于交流开关和相位控制应

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

QS8004DH2TP 数据手册

QS8004xHx

Thyristor Datasheet

Fig. 11.Test Circuit for Inductive and Resistive Loads with Conditions Equivalent to IEC 61000-4-5

IEC 61000-4-5 Standards

Surge Generator

Gen

Filtering Unit

DUT

Load Model

AC Mains

220

Soldering Parameters

t_P

Reﬂow Condition

Pb – Free assembly

150°C

T_P

-Temperature Min (T_s(min)

)

Ramp-up

Pre Heat

-Temperature Max (T_s(max)

)

200°C

T_L

T_S(max)

-Time (min to max) (t_s)

60 – 120 seconds

t_L

Average ramp up rate (LiquidusTemp) (T_L) to

peak

3°C/second max.

Ramp-down

Preheat

T_S(max)toT_L- Ramp-up Rate

3°C/second max.

217°C

-Temperature (T_L) (Liquidus)

T_S(min)

Reﬂow

t_S

-Time (t_L)

60 – 150 seconds

260^+0/-5°C

PeakTemperature (T_P)

Time within 5°C of actual peakTemperature (t_p)

Ramp-down Rate

30 seconds max.

6°C/second max.

8 minutes max.

260°C

time to peak temperature

Time

Time 25°C to peakTemperature (T_P)

Do not exceed

Physical Speciﬁcations

Environmental Speciﬁcations

Test

Speciﬁcations and Conditions

Terminal Finish

Body Material

100% MatteTin-plated

UL recognized compound meeting ﬂammability

rating 94 V-0

Copper Alloy

MIL-STD-750, M-1040, Cond A Applied

Peak AC voltage @ 125°C for 1008 hours

MIL-STD-750, M-1051,1000 cycles; -55°C

to +150°C; 15-min dwell-time

AC Blocking

Terminal Material

Temperature Cycling

EIA / JEDEC, JESD22-A101; 1008 hours;

320V - DC: 85°C; 85% rel humidity

Temperature/Humidity

Design Considerations

High-temp Storage

Low-temp Storage

MIL-STD-750, M-1031, 1008 hours; 150°C

1008 hours; -40°C

Careful selection of the correct component for the application’s

operating parameters and environment will go a long way toward

extending the operating life of the Thyristor. Good design practice

should limit the maximum continuous current through the main

terminals to 75% of the component rating. Other ways to ensure long

life for a power discrete semiconductor are proper heat sinking and

selection of voltage ratings for worst case conditions. Overheating,

overvoltage (including dv/dt), and surge currents are the main killers of

semiconductors. Correct mounting, soldering, and forming of the leads

also help protect against component damage.

Resistance to Solder Heat

Solderability

MIL-STD-750 Method 2031

ANSI/J-STD-002, category 3, Test A

MSL Level 1

Moisture Sensitivity Level

Speciﬁcations are subject to change without notice.

Revised: TK.06/15/2023

1 2 3 456 7

下载PDF

与QS8004DH2TP相关器件

型号	品牌	描述	获取价格	数据表
QS8004DH4RP	LITTELFUSE	这款4安培过压开关集成了一个具有高压箝位功能的三端双向可控硅结构，以确保能够承受高过压事件	获取价格
QS8004DH4TP	LITTELFUSE	这款4安培过压开关集成了一个具有高压箝位功能的三端双向可控硅结构，以确保能够承受高过压事件	获取价格
QS820K	OHMITE	General Purpose Inductor, 0.82uH, 10%, 1 Element, Iron-Core, AXIAL LEADED	获取价格
QS821K	OHMITE	General Purpose Inductor, 8.2uH, 10%, 1 Element, Iron-Core, AXIAL LEADED	获取价格
QS822K	OHMITE	General Purpose Inductor, 82uH, 10%, 1 Element, Iron-Core, AXIAL LEADED	获取价格
QS823K	OHMITE	General Purpose Inductor, 820uH, 10%, 1 Element, Iron-Core, AXIAL LEADED	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

QS8004DH2TP

QS8004DH2TP 数据手册

与QS8004DH2TP相关器件

与QS8004DH2TP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

QS8004DH2TP

QS8004DH2TP 数据手册

与QS8004DH2TP相关器件

与QS8004DH2TP相关文章

您还可以找

您在本页遇到什么问题？