5秒后页面跳转
QS8J4 PDF预览

QS8J4

更新时间: 2024-02-20 06:37:55
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
6页 338K
描述
4V Drive Pch + Pch MOSFET

QS8J4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.64配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.056 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.5 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

QS8J4 数据手册

 浏览型号QS8J4的Datasheet PDF文件第2页浏览型号QS8J4的Datasheet PDF文件第3页浏览型号QS8J4的Datasheet PDF文件第4页浏览型号QS8J4的Datasheet PDF文件第5页浏览型号QS8J4的Datasheet PDF文件第6页 
4V Drive Pch + Pch MOSFET  
QS8J4  
Structure  
Dimensions (Unit : mm)  
TSMT8  
Silicon P-channel MOSFET  
(8) (7) (6) (5)  
Features  
1) Low on-resistance.  
(1) (2) (3) (4)  
2) High power package(TSMT8).  
3) Low voltage drive(4V drive).  
Abbreviated symbol : J04  
Application  
Switching  
Packaging specifications  
Inner circuit  
Package  
Taping  
TR  
(8)  
(7)  
(6)  
(5)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
QS8J4  
2  
2  
1  
1  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(1)  
(2)  
(3)  
(4)  
Symbol  
VDSS  
VGSS  
ID  
Limits  
30  
20  
4  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Drain-source voltage  
Gate-source voltage  
V
Continuous  
A
Drain current  
Pulsed  
*1  
IDP  
Is  
16  
1  
A
Continuous  
Pulsed  
A
Source current  
(Body Diode)  
*1  
*2  
Isp  
16  
A
1.5  
1.25  
W / TOTAL  
PD  
Power dissipation  
W / ELEMENT  
Channel temperature  
Tch  
150  
C  
C  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
Tstg  
55 to +150  
*2 Each terminal mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Limits  
83.3  
100  
Unit  
°C / W /TOTAL  
°C / W /ELEMENT  
*
Channel to Ambient  
Rth (ch-a)  
* Each terminal mounted on a ceramic board.  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
2010.04 - Rev.A  
1/5  

与QS8J4相关器件

型号 品牌 描述 获取价格 数据表
QS8J4FRA ROHM QS8J4FRA is the high reliability Automotive MOSFET, suitable for the switching application

获取价格

QS8J4FRATR ROHM Small Signal Field-Effect Transistor,

获取价格

QS8J4HZG ROHM QS8J4HZG是非常适用于开关应用的MOSFET。是符合AEC-Q101标准的车载级高可

获取价格

QS8J5 ROHM 4V Drive Pch + Pch MOSFET

获取价格

QS8K11 ROHM 4V Drive Nch + Nch MOSFET

获取价格

QS8K12 ROHM 4V Drive Nch + Nch MOSFET

获取价格