QS8K2HZG
ꢀꢀ30V Nch+Nch Small Signal MOSFET
Datasheet
ꢀꢀ
llOutline
ꢀ
VDSS
30V
54mΩ
±3.5A
1.5W
RDS(on)(Max.)
TSMT8
ID
ꢀ
PD
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llInner circuit
llFeatures
1) Low on - resistance
2) Built-in G-S protection diode
3) Small surface mount package(TSMT8)
4) Pb-free lead plating ; RoHS compliant
5) AEC-Q101 Qualified
llPackaging specifications
Packing
Embossed
Tape
llApplication
Reel size (mm)
180
8
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
K02
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified) <Tr1 and Tr2>
a
Parameter
Drain - Source voltage
Symbol
VDSS
ID
Value
30
Unit
V
Continuous drain current
Pulsed drain current
±3.5
A
*1
IDP
±12
A
VGSS
Gate - Source voltage
±12
V
*2
PD
1.5
Power dissipation (total)
W
*3
PD
1.1
Tj
Junction temperature
150
℃
℃
Tstg
Operating junction and storage temperature range
-55 to +150
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