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QS8J4 PDF预览

QS8J4

更新时间: 2024-01-08 04:31:45
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
6页 338K
描述
4V Drive Pch + Pch MOSFET

QS8J4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.64配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.056 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.5 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

QS8J4 数据手册

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