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QS8J2 PDF预览

QS8J2

更新时间: 2024-02-11 22:37:56
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
6页 371K
描述
1.5V Drive Pch MOSFET

QS8J2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.71Samacsys Description:QS8J2TR Dual P-Channel MOSFET, 4 A, 12 V QS8J2, 8-Pin TSMT ROHM
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:12 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.036 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.5 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

QS8J2 数据手册

 浏览型号QS8J2的Datasheet PDF文件第2页浏览型号QS8J2的Datasheet PDF文件第3页浏览型号QS8J2的Datasheet PDF文件第4页浏览型号QS8J2的Datasheet PDF文件第5页浏览型号QS8J2的Datasheet PDF文件第6页 
1.5V Drive Pch MOSFET  
QS8J2  
Dimensions (Unit : mm)  
Structure  
Silicon P-channel MOSFET  
TSMT8  
(8) (7) (6) (5)  
Features  
1) Low On-resistance.  
2) High power package.  
3) 1.5V drive.  
(1) (2) (3) (4)  
Abbreviated symbol : J02  
Application  
Switching  
Inner circuit  
Packaging specifications  
Package  
Taping  
TR  
(8)  
(7)  
(6)  
(5)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Source  
(4) Tr2 Gate  
(5) Tr2 Drain  
(6) Tr2 Drain  
(7) Tr1 Drain  
(8) Tr1 Drain  
2  
2  
QS8J2  
1  
1  
(1)  
(2)  
(3)  
(4)  
Absolute maximum ratings (Ta = 25C)  
Parameter  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Symbol  
VDSS  
VGSS  
ID  
Limits  
12  
10  
  
Unit  
V
Drain-source voltage  
Gate-source voltage  
V
Continuous  
A
Drain current  
Pulsed  
*1  
IDP  
Is  
12  
1  
A
Continuous  
Pulsed  
A
Source current  
(Body Diode)  
*1  
*2  
Isp  
12  
A
1.5  
1.25  
W / TOTAL  
PD  
Power dissipation  
W / ELEMENT  
Channel temperature  
Tch  
150  
C  
C  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
Tstg  
55 to +150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Limits  
83.3  
100  
Unit  
C/ W /TOTAL  
C/W/ELEMENT  
*
Channel to Ambient  
Rth (ch-a)  
* Mounted on a ceramic board.  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
2010.09 - Rev.A  
1/5  

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