QS8004xHx
Thyristor Datasheet
Maximum Ratings
Symbol
Characteristics
Conditions
TC = 118 °C
Value
4
Unit
IT(RMS)
ITSM
RMS On-state Current (Full Sine Wave)
A
f = 50 Hz, t = 20 ms
f = 60 Hz, t = 16.7 ms
tp = 8.3 ms
46
Non-repetitive Surge Peak On-state Current
(Full Cycle, TJ Initial = 25 °C)
A
55
I2t
I2t Value for Fusing
12.5
A2s
IG = 50 mA with ≤ 0.1 µs rise time, f = 60 Hz,
TJ =125 °C
di/dt
Critical Rate of Rise of On-state Current
100
A/µs
IGTM
PG(AV)
TSTG
TJ
Peak GateTrigger Current
Average Gate Power Dissipation
StorageTemperature
tp = 20 µs, TJ =125 °C
4
0.3
A
TJ =125 °C
W
°C
°C
kV
–
–
-40 to 150
-40 to 125
2
Operating JunctionTemperature
Non-repetitive Line Peak Mains Voltage
1
VPP
TJ =25 °C
Note 1: According to the test described in IEC 61000-4-5 standard and Figure 12
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Symbol
IGT
Conditions
VD = 12 V, RL = 60 Ω
Quadrant
QS8004DH2
QS8004DH4
Unit
I – II – III
Max.
Max.
Min.
Max.
Min.
Typ.
–
10
1.3
0.2
20
35
1.3
0.2
30
mA
V
VGT
VD = 12 V, RL = 60 Ω
I – II – III
VGD
VD = VDRM, RL = 3.3 kΩ, TJ = 125 °C
IT = 200 mA
All
–
V
IH
mA
V/µs
µs
(dv/dt)C
tgt
(di/dt)C = 21.6 A/ms, TJ = 125 °C
IG = 2 x IGT, PW = 15 µs, IT = 5.6 APK
VD = 2/3 VDRM, Gate Open, TJ = 125 °C
ICL = 0.1 mA, TP = 1 ms
–
2
5
–
2.5
200
850
3.0
400
850
dv/dt
VCL
All
All
V/µs
V
Min.
Thermal Characteristics
Symbol
Rϴ(JC)
Characteristics
Value
Unit
Thermal Resistance, junction-to-case (AC)
Thermal Resistance, junction-to-ambient
1.5
70
°C/W
°C/W
Rϴ(JA)
Static Characteristics
Value
Symbol
Conditions
Unit
Min.
Typ.
–
Max.
1.4
5
VTM
ITM = 5.6 A, tP = 380 µs
VDRM = VRRM, TJ = 25 °C
VDRM = VRRM, TJ = 125 °C
–
V
IDRM / IRRM
IDRM / IRRM
–
–
–
µA
mA
–
2
© 2023 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: TK.06/15/2023
2