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QS8004DH2TP PDF预览

QS8004DH2TP

更新时间: 2023-12-06 20:12:50
品牌 Logo 应用领域
力特 - LITTELFUSE 开关高压可控硅
页数 文件大小 规格书
7页 433K
描述
这款4安培过压开关集成了一个具有高压箝位功能的三端双向可控硅结构,以确保能够承受高过压事件,例如IEC 61000-4-5标准中描述的线路瞬变。 这个双向固态开关系列旨在用于交流开关和相位控制应

QS8004DH2TP 数据手册

 浏览型号QS8004DH2TP的Datasheet PDF文件第1页浏览型号QS8004DH2TP的Datasheet PDF文件第3页浏览型号QS8004DH2TP的Datasheet PDF文件第4页浏览型号QS8004DH2TP的Datasheet PDF文件第5页浏览型号QS8004DH2TP的Datasheet PDF文件第6页浏览型号QS8004DH2TP的Datasheet PDF文件第7页 
QS8004xHx  
Thyristor Datasheet  
Maximum Ratings  
Symbol  
Characteristics  
Conditions  
TC = 118 °C  
Value  
4
Unit  
IT(RMS)  
ITSM  
RMS On-state Current (Full Sine Wave)  
A
f = 50 Hz, t = 20 ms  
f = 60 Hz, t = 16.7 ms  
tp = 8.3 ms  
46  
Non-repetitive Surge Peak On-state Current  
(Full Cycle, TJ Initial = 25 °C)  
A
55  
I2t  
I2t Value for Fusing  
12.5  
A2s  
IG = 50 mA with ≤ 0.1 µs rise time, f = 60 Hz,  
TJ =125 °C  
di/dt  
Critical Rate of Rise of On-state Current  
100  
A/µs  
IGTM  
PG(AV)  
TSTG  
TJ  
Peak GateTrigger Current  
Average Gate Power Dissipation  
StorageTemperature  
tp = 20 µs, TJ =125 °C  
4
0.3  
A
TJ =125 °C  
W
°C  
°C  
kV  
-40 to 150  
-40 to 125  
2
Operating JunctionTemperature  
Non-repetitive Line Peak Mains Voltage  
1
VPP  
TJ =25 °C  
Note 1: According to the test described in IEC 61000-4-5 standard and Figure 12  
Electrical Characteristics (TJ = 25°C unless otherwise specified)  
Symbol  
IGT  
Conditions  
VD = 12 V, RL = 60 Ω  
Quadrant  
QS8004DH2  
QS8004DH4  
Unit  
I – II – III  
Max.  
Max.  
Min.  
Max.  
Min.  
Typ.  
10  
1.3  
0.2  
20  
35  
1.3  
0.2  
30  
mA  
V
VGT  
VD = 12 V, RL = 60 Ω  
I – II – III  
VGD  
VD = VDRM, RL = 3.3 kΩ, TJ = 125 °C  
IT = 200 mA  
All  
V
IH  
mA  
V/µs  
µs  
(dv/dt)C  
tgt  
(di/dt)C = 21.6 A/ms, TJ = 125 °C  
IG = 2 x IGT, PW = 15 µs, IT = 5.6 APK  
VD = 2/3 VDRM, Gate Open, TJ = 125 °C  
ICL = 0.1 mA, TP = 1 ms  
2
5
2.5  
200  
850  
3.0  
400  
850  
dv/dt  
VCL  
All  
All  
V/µs  
V
Min.  
Thermal Characteristics  
Symbol  
Rϴ(JC)  
Characteristics  
Value  
Unit  
Thermal Resistance, junction-to-case (AC)  
Thermal Resistance, junction-to-ambient  
1.5  
70  
°C/W  
°C/W  
Rϴ(JA)  
Static Characteristics  
Value  
Symbol  
Conditions  
Unit  
Min.  
Typ.  
Max.  
1.4  
5
VTM  
ITM = 5.6 A, tP = 380 µs  
VDRM = VRRM, TJ = 25 °C  
VDRM = VRRM, TJ = 125 °C  
V
IDRM / IRRM  
IDRM / IRRM  
µA  
mA  
2
© 2023 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: TK.06/15/2023  
2

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