Datasheet > QJD0142003

QJD0142003

更新时间： 2024-09-21 20:02:19

品牌	Logo	应用领域
POWEREX		局域网晶体管
页数	文件大小	规格书
2页	24K
描述
Power Field-Effect Transistor, 100V, 0.0028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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QJD0142003 数据手册

QJD0142003

Dual Power MOSFET Module

100 Volts 420 Amperes

Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272

Description:

Powerex Dual Mosfet Module designed specially for

customer applications.

Features:

•

Isolated Mounting

Copper Baseplate

Low Drive Requirement

Internal Series Gate Resistors (6Ω per chip)

Low Rds(on)

Fast Diodes

(6) FS70UMJ-2 Chips per Mosfet Switch

Dim

Inches

3.70

Millimeters

94.0

3.150 ±0.01

1.89

1.18 Max.

0.90

80.0 ±0.25

48.0

30.0 Max

23.0

.83

21.2

0.71

0.67

0.63

18.0

17.0

16.0

0.51

0.47

13.0

12.0

0.30

0.28

0.256 Dia.

0.26

7.5

7.0

Dia. 6.5

6.5

SE1

C2E1

---

0.16

4.0

SE2

Preliminary

Page 1

1/30/2001

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