Datasheet > QJD1210006

QJD1210006

更新时间： 2024-09-21 21:22:07

品牌	Logo	应用领域
POWEREX		局域网开关脉冲晶体管
页数	文件大小	规格书
4页	419K
描述
Power Field-Effect Transistor, 100A I(D), 1200V, 0.025ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-7

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QJD1210006 数据手册

QJD1210006 Preliminary

Silicon Carbide

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272

www.pwrx.com

MOSFET Module

100 Amperes/1200 Volts

S1D2

E B

Description:

Powerex Silicon Carbide MOSFET

Modules are designed for use in

high frequency application. Each

module consists of two MOSFET

Silicon Carbide Transistors in

half-bridge configuration with

each transistor having a reverse

connected fast recovery free-wheel

silicon carbide Schottky diode. All

components and interconnects

are isolated from the heat sinking

baseplate, offering simplified

system assembly and thermal

management.

S - NUTS (3 TYP)

T - (4 TYP)

LABEL

S1D2

Features:

£ Junction Temperature - 200°C

£ Silicon Carbide Chips

£ Industry Leading RDS(on)

£ High Speed Switching

£ Low Switching Losses

£ Low Capacitance

£ Low Drive Requirement

£ Fast 50A Free Wheeling

Schottky Diode

Outline Drawing and Circuit Diagram

Dimensions

Inches

4.25

Millimeters

Dimensions

Inches

0.98

Millimeters

25.0

2.8

108.0

62.0

2.44

0.11

1.14+0.04/-0.01 29.0+1.0/-0.5

M6 Metric

0.26 Dia.

0.02

£ High Power Density

£ Isolated Baseplate

£ Aluminum Nitride Ceramic

3.66 0.01

1.88 0.01

0.67

93.0 0.25

48.0 0.25

17.0

Dia. 6.5

0.5

0.71

18.0

7.0

Applications:

0.16

4.0

0.28

£ High Frequency Power Supply

£ High Efficiency Inverter

£ High Temperature Environment

0.24

6.0

0.16

4.0

0.59

15.0

0.3

7.5

0.55

14.0

0.325

0.624

0.709

0.69

8.25

15.85

18.0

17.5

0.87

22.0

0.33

8.5

0.10

2.5

0.85

21.5

1.012

25.7

04/12 Rev. 6

12 3 4

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