QJD1210011 Preliminary
Split Dual SiC
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
MOSFET Module
100 Amperes/1200 Volts
Y
A
F
AA
D
AC
AB
Z
DETAIL "B"
Q
Q
Q
P
U
Description:
1
2
3
4
5
6
7
8
9
10 11 12
Powerex Silicon Carbide MOSFET
Modules are designed for use in
high frequency applications. Each
module consists of two MOSFET
Silicon Carbide Transistors with
each transistor having a reverse
connected fast recovery free-wheel
silicon carbide Schottky diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
X
B
M
N
E
G
DETAIL "B"
20 19 18 17
16 15 14 13
L
T
S
R
W
DETAIL "A"
V
H
K
C
T
Features:
DETAIL "A"
£ Junction Temperature: 175°C
£ Silicon Carbide Chips
£ Low Internal Inductance
£ Industry Leading RDS(on)
£ High Speed Switching
£ Low Switching Losses
£ Low Capacitance
D2 (4 - 6)
D1 (10 - 12)
G1 (15 - 16)
G2 (19 - 20)
S2 (17 - 18)
S2 (1 - 3)
S1 (13 - 14)
S1 (7 - 9)
£ Low Drive Requirement
£ Fast 100A Free Wheeling
Schottky Diode
£ High Power Density
£ Isolated Baseplate
£ Aluminum Nitride Isolation
£ 2 Individual Switches
per Module
Outline Drawing and Circuit Diagram
Dimensions
Inches
4.32
Millimeters
109.8
56.1
Dimensions
Inches
Millimeters
11.40
22.49
26.6
A
B
C
D
E
F
Q
R
0.449
0.885
1.047
2.21
0.71
18.0
S
£ AlSiC Baseplate
£ RoHS Compliant
3.70 0.02
2.026
3.17
94.0 0.5
51.46
80.5
T
0.15
3.80
U
0.16
4.0
Applications:
V
0.30
7.5
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
G
H
K
L
1.96
49.8
W
X
0.045
0.03
1.15
1.00
25.5
0.8
0.87
22.0
Y
0.16
4.0
£ High Frequency Type Power
Systems such as:
0.266
0.26
6.75
Z
0.47
12.1
M
N
P
6.5
AA
AB
AC
0.17 Dia.
0.10 Dia.
0.08 Dia.
4.3 Dia.
2.5 Dia.
2.1 Dia.
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
0.59
15.0
0.586
14.89
£ High Temperature Power
Systems such as:
Power Electronics in Electric
Vehicle and Aviation Systems
2/7/14 Rev. 4
1