Datasheet > QJQ0220001

QJQ0220001

更新时间： 2024-09-21 21:12:19

品牌	Logo	应用领域
POWEREX		局域网斩波器晶体管
页数	文件大小	规格书
2页	22K
描述
Power Field-Effect Transistor, 250V, 0.0172ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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QJQ0220001 数据手册

QJQ0220001

Low side Chopper Mosfet Module

Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272

250V 200A Mosfet / 600V 600A Fast Diode

Description:

Powerex Low side Chopper Mosfet Module

designed specially for customer applications.

Features:

•

Isolated Mounting

Insulated Metal Copper Baseplate

Low Drive Requirement

Internal Series Gate Resistors (6Ω per chip)

Low Rds(on)

Fast Diodes

(5) FS40SM-5 Chips per Mosfet Switch

(6) H Series 100A 600V Chips per diode

Dim

Inches

3.70

Millimeters

94.0

3.150 ±0.01

1.89

1.14 Max.

0.90

80.0 ±0.25

48.0

29.0 Max

23.0

0.80

20.2

0.71

0.67

0.63

18.0

17.0

16.0

0.51

0.47

0.30

0.28

13.0

12.0

7.5

7.0

Dia. 6.5

5.5

SE1

SE2

0.256 Dia.

0.22

---

0.16

4.0

C2/ E1

Preliminary

Page 1

2/11/2000

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