是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-PUFM-X7 | 针数: | 7 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.81 | 外壳连接: | ISOLATED |
集电极-发射极最大电压: | 1200 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
JESD-30 代码: | R-PUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QID1210005 | POWEREX |
获取价格 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts | |
QID1210006 | POWEREX |
获取价格 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts | |
QID1210006_14 | POWEREX |
获取价格 |
Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts | |
QID1210007 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor | |
QID1215003 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor | |
QID1230015 | POWEREX |
获取价格 |
Dual IGBTMOD NX-Series Module 300 Amperes/1200 Volts | |
QID3310001 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel, MODULE-9 | |
QID3310002 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 3300V V(BR)CES, N-Channel, MODULE-9 | |
QID3310006 | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor | |
QID3320002 | POWEREX |
获取价格 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts |