生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, CERAMIC, DIP-28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.25 |
最长访问时间: | 250 ns | JESD-30 代码: | R-CDIP-T28 |
内存密度: | 65536 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 28 | 字数: | 8192 words |
字数代码: | 8000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 8KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
编程电压: | 5 V | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 | 座面最大高度: | 5.8928 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 15.24 mm |
最长写入周期时间 (tWC): | 1 ms | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PYA28C64XE-25CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28C64XE-25LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28C64XE-25LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28C64XE-35CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28C64XE-35CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28C64XE-35LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28C64XE-35LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms) | |
PYA28HC256 | PYRAMID |
获取价格 |
Access Times of 70, 90 and 120ns Software Data Protection | |
PYA28HC256120LM | PYRAMID |
获取价格 |
EEPROM, 32KX8, 120ns, Parallel, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
PYA28HC256-12CWM | PYRAMID |
获取价格 |
Access Times of 70, 90 and 120ns Software Data Protection |