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PYA28HC256-70CWMB PDF预览

PYA28HC256-70CWMB

更新时间: 2024-11-13 00:44:15
品牌 Logo 应用领域
PYRAMID /
页数 文件大小 规格书
15页 798K
描述
Access Times of 70, 90 and 120ns Software Data Protection

PYA28HC256-70CWMB 数据手册

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PYA28HC256  
HIGH SPEED 32K x 8 EEPROM  
FEATURES  
Access Times of 70, 90 and 120ns  
Single 5V±10% Power Supply  
Software Data Protection  
CMOS & TTL Compatible Inputs and Outputs  
Endurance:  
Simple Byte and Page Write  
- 10,000 Write Cycles  
- 100,000 Write Cycles (optional)  
Low Power CMOS:  
- 80 mA Active Current  
- 3 mA Standby Current  
Data Retention: 10 Years  
Available in the following package:  
– 28-Pin 600 mil Ceramic DIP  
Fast Write Cycle Times  
– 32-Pin Ceramic LCC (450x550 mils)  
DESCRIPTIOꢀ  
ThePYA28HC256isa5Volt32Kx8EEPROM. Thedevice  
supports 64-byte page write operation. ThePYA28HC256  
features DATA and Toggle Bit Polling as well as a system  
software scheme used to indicate early completion of a  
Write Cycle. The device also includes user-optional soft-  
ware data protection. Data Retention is 10 Years. The  
device is available in a 28-Pin 600 mil wide Ceramic DIP  
and 32-Pin LCC.  
FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM  
PIꢀ COꢀFIꢂURATIOꢀ  
DIP (C5-1)  
LCC (L6)  
Document # EEPROM106 REV 03  
Revised October 2014  

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