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PYA28C64XE-35LMB PDF预览

PYA28C64XE-35LMB

更新时间: 2024-09-25 00:26:39
品牌 Logo 应用领域
PYRAMID 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
10页 676K
描述
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms)

PYA28C64XE-35LMB 技术参数

生命周期:Obsolete零件包装代码:QFJ
包装说明:0.450 X 0.550 INCH, CERAMIC, LCC-32针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.25
最长访问时间:350 nsJESD-30 代码:R-CQCC-N32
长度:13.97 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:1.905 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
宽度:11.43 mm最长写入周期时间 (tWC):1 ms
Base Number Matches:1

PYA28C64XE-35LMB 数据手册

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PYA28C64(X)  
8K X 8 EEPROM  
FEATURES  
Access Times of 150, 200, 250 and 350ns  
Single 5V±10% Power Supply  
CMOS & TTL Compatible Inputs and Outputs  
Endurance:  
- 10,000 Write Cycles  
- 100,000 Write Cycles (optional)  
Fast Byte Write (200µs or 1 ms)  
Data Retention: 10 Years  
Low Power CMOS:  
- 60 mA Active Current  
- 150 µA Standby Current  
Available in the following package:  
– 28-Pin 600 mil Ceramic DIP  
– 32-Pin Ceramic LCC (450x550 mils)  
Fast Write Cycle Time  
RDY/BUSY pin is not connected for the  
PYA28C64X  
PIN CONFIGURATIONS  
DESCRIPTION  
ThePYA28C64isa5Volt8Kx8EEPROM. ThePYA28C64  
featuresDATA andRDY/BUSY(PYA28C64only)toindicate  
early completion of a Write Cycle. Data Retention is 10  
Years. The device is available in a 28-Pin 600 mil wide  
Ceramic DIP and 32-Pin LCC.  
DIP (C5-1)  
FUNCTIONAL BLOCK DIAGRAM  
LCC (L6)  
NOTE: The RDY/BUSY pin is not connected for the PYA28C64X.  
Revised June 2012  
Document # EEPROM105 REV B  

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