Datasheet > PXFC191507FCV1R250

PXFC191507FCV1R250

更新时间： 2024-11-09 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1039K
描述
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 â 1990 MHz

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PXFC191507FC

Thermally-Enhanced High Power RF LDMOS FET

150 W, 28 V, 1805 – 1990 MHz

Description

PXFC191507FC

Package H-37248G-4/2

The PXFC191507FC is a 150-watt LDMOS FET intended for use

in multi-standard cellular power ampliﬁer applications in the 1805

to 1990 MHz frequency band. Features include input and output

matching, high gain and thermally-enhanced package with earless

ﬂanges. Manufactured with Inﬁneon's advanced LDMOS process,

this device provides excellent thermal performance and superior

reliability.

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 960 mA, V_GS= 2.65 V,

ƒ = 1990 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

•

Broadband internal input and output matching

Typical Pulsed CW performance, 1990 MHz, 28 V,

10 µs pulse width, 10% duty cycle, class AB test

- Output power at P

- Efﬁciency = 54%

- Gain = 19.5 dB

= 140 W

1dB

Gain

•

Typical single-carrier WCDMA performance,

1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test

Model 1 with 16DPCH

- Output power = 32 W avg

- Efﬁciency = 34%

- Gain = 20 dB

- ACPR = –31 dBc@ 5 MHz

Efficiency

•

Capable of handling 10:1 VSWR @28 V, 150 W

(CW) output power

Integrated ESD protection : Human Body Model,

c191507fc_g1

Class 1C (per JESD22-A114)

•

Low thermal resistance

Output Power (dBm)

Pb-free and RoHS compliant

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in Inﬁneon production test ﬁxture)

= 28 V, I = 960 mA, P = 32 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

20.5

Max

—

Unit

Drain Efﬁciency

Intermodulation Distortion

h_D

—

IMD

—

–33

–31

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 02.1, 2016-06-22

12 3 4 5 6 7 8

中文翻译

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与PXFC191507FCV1R250相关器件

型号	品牌	获取价格	描述	数据表
PXFC191507FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXFC192207FH	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET
PXFC192207FH	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 - 1990 MHz
PXFC192207FH_16	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207SH	INFINEON	获取价格	Broadband internal input and output matching
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