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PXAC182002FCV1R250XTMA1 PDF预览

PXAC182002FCV1R250XTMA1

更新时间: 2024-11-15 01:01:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1191K
描述
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz

PXAC182002FCV1R250XTMA1 数据手册

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PXAC182002FC  
Thermally-Enhanced High Power RF LDMOS FET  
180 W, 28 V, 1805 – 1880 MHz  
Description  
PXAC182002FC  
Package H-37248-4  
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetri-  
cal design intended for use in multi-standard cellular power amplifier  
applications in the 1805 to 1880 MHz frequency band. Features  
include dual-path design, input and output matching, high gain and  
thermally-enhanced package with earless flanges. Manufactured  
with Infineon's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,  
3GPP WCDMA signal,  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetrical Doherty design  
- Main: 70 W Typ (P  
)
1dB  
PAR = 10 dB, 3.84 MHz BW  
- Peak: 110 W Typ (P  
)
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Typical pulsed CW performance, 1880 MHz, 28 V,  
Efficiency  
combined outputs  
- Output power at P  
- Efficiency = 64%  
- Gain = 14 dB  
= 194 W  
3dB  
Gain  
•ꢀ Capable of handling 10:1 VSWR @28 V, 110 W  
(CW) output power  
•ꢀ Integrated ESD protection  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
•ꢀ Human Body Model Class 1C (per ANSI/ESDA/  
JEDEC JS-001)  
4
•ꢀ Low thermal resistance  
•ꢀ Pb-free and RoHS compliant  
0
c182002fc_g1  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 400 mA, V = 1.1 V, P = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84  
V
DD  
DQ  
GSPEAK  
OUT  
MHz, peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
15.5  
48.5  
Typ  
16.5  
51  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
%
Adjancent Channel Power Ratio  
ACPR  
–30  
–26  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 02.3, 2016-06-17  

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