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PUMD12,115 PDF预览

PUMD12,115

更新时间: 2024-09-23 15:48:39
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 923K
描述
PEMD12; PUMB12 - NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ TSSOP 6-Pin

PUMD12,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSSOP包装说明:PLASTIC, SC-88, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.21其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PUMD12,115 数据手册

 浏览型号PUMD12,115的Datasheet PDF文件第2页浏览型号PUMD12,115的Datasheet PDF文件第3页浏览型号PUMD12,115的Datasheet PDF文件第4页浏览型号PUMD12,115的Datasheet PDF文件第5页浏览型号PUMD12,115的Datasheet PDF文件第6页浏览型号PUMD12,115的Datasheet PDF文件第7页 
PEMD12; PUMD12  
NPN/PNP resistor-equipped transistors;  
R1 = 47 k, R2 = 47 k  
Rev. 4 — 21 November 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted  
Device (SMD) plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
PNP/PNP  
complement  
NPN/NPN  
complement  
Package  
configuration  
JEITA  
PEMD12  
SOT666  
-
PEMB2  
PUMB2  
PEMH2  
PUMH2  
ultra small and flat  
lead  
PUMD12  
SOT363  
SC-88  
very small  
1.2 Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
Simplifies circuit design  
1.3 Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor (TR2) with negative polarity  
VCEO  
IO  
collector-emitter voltage  
output current  
open base  
-
-
50  
V
-
-
100  
61  
mA  
k  
R1  
bias resistor 1 (input)  
bias resistor ratio  
33  
0.8  
47  
1
R2/R1  
1.2  
 
 
 
 
 

PUMD12,115 替代型号

型号 品牌 替代类型 描述 数据表
PUMD12 NXP

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NPN/PNP resistor-equipped transistor
MUN5313DW1T1G ONSEMI

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