Datasheet > PUMD13-Q

PUMD13-Q

更新时间： 2023-09-03 20:34:57

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	246K
描述
NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩProduction

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数据手册

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PUMD13-Q 数据手册

PUMD13-Q

NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ,

R2 = 47 kΩ

25 October 2021

Product data sheet

1. General description

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-

Mounted Device (SMD) plastic package.

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor (TR2) with negative polarity where applicable

V_CEO

collector-emitter

voltage

open base

I_O

output current

bias resistor 1

bias resistor ratio

100

6.1

kΩ

[1]

3.3

4.7

R2/R1

[1] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...14

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