Datasheet > PUMD16-Q

PUMD16-Q

更新时间： 2023-09-03 20:35:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	233K
描述
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩProduction

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PUMD16-Q 数据手册

PUMD16-Q

50 V, 100 mA NPN/PNP resistor-equipped double transistor;

R1 = 22 kΩ, R2 = 47 kΩ

8 March 2023

Product data sheet

1. General description

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-

Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH16

PNP/PNP complement: PUMB16

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplified circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low current peripheral driver

Controlling IC inputs

Replacement of general purpose transistors in digital applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

[1]

I_O

output current

[1]

[2]

100

28.6

2.6

kΩ

bias resistor 1 (input)

bias resistor ratio

15.4

1.7

2.1

R2/R1

[1] For the PNP transistor with negative polarity.

[2] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...11

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