5秒后页面跳转
PUMD15,115 PDF预览

PUMD15,115

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 908K
描述
PEMD15; PUMD15 - NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ TSSOP 6-Pin

PUMD15,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSSOP包装说明:PLASTIC, SC-88, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PUMD15,115 数据手册

 浏览型号PUMD15,115的Datasheet PDF文件第2页浏览型号PUMD15,115的Datasheet PDF文件第3页浏览型号PUMD15,115的Datasheet PDF文件第4页浏览型号PUMD15,115的Datasheet PDF文件第5页浏览型号PUMD15,115的Datasheet PDF文件第6页浏览型号PUMD15,115的Datasheet PDF文件第7页 
PEMD15; PUMD15  
NPN/PNP resistor-equipped transistors;  
R1 = 4.7 k, R2 = 4.7 k  
Rev. 4 — 19 December 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted  
Device (SMD) plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
PNP/PNP  
complement  
NPN/NPN  
complement  
Package  
configuration  
JEITA  
PEMD15  
SOT666  
-
PEMB15  
PUMB15  
PEMH15  
PUMH15  
ultra small and flat  
lead  
PUMD15  
SOT363  
SC-88  
very small  
1.2 Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
Simplifies circuit design  
1.3 Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor (TR2) with negative polarity  
VCEO  
IO  
collector-emitter voltage open base  
output current  
-
-
50  
V
-
-
100  
6.1  
1.2  
mA  
k  
R1  
bias resistor 1 (input)  
bias resistor ratio  
3.3  
0.8  
4.7  
1
R2/R1  

PUMD15,115 替代型号

型号 品牌 替代类型 描述 数据表
PUMD15 NXP

功能相似

NPN/PNP resistor-equipped transistors : R1 = 4.7 k-ohm, R2 = 4.7 k-ohm
BZB984-C3V3 NXP

功能相似

Voltage regulator double diodes

与PUMD15,115相关器件

型号 品牌 获取价格 描述 数据表
PUMD15,125 NXP

获取价格

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
PUMD15,135 NXP

获取价格

PEMD15; PUMD15 - NPN/PNP resistor-equipped tr
PUMD15/T1 NXP

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-
PUMD15/T2 NXP

获取价格

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-
PUMD15-Q NEXPERIA

获取价格

50 V, 100 mA NPN/PNP resistor-equipped double
PUMD16 NXP

获取价格

NPN/PNP resistor-equipped transistors
PUMD16 NEXPERIA

获取价格

50 V, 100 mA NPN/PNP resistor-equipped double
PUMD16,115 NXP

获取价格

PEMD16; PUMD16 - NPN/PNP resistor-equipped transistors; R1 = 22 k Ohm, R2 = 47 k Ohm TSSOP
PUMD16_05 NXP

获取价格

NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = 47 kW
PUMD16-Q NEXPERIA

获取价格

50 V, 100 mA NPN/PNP resistor-equipped double