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PUMD10T/R PDF预览

PUMD10T/R

更新时间: 2024-02-03 22:48:46
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
9页 67K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal

PUMD10T/R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
风险等级:5.71其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):230 MHzBase Number Matches:1

PUMD10T/R 数据手册

 浏览型号PUMD10T/R的Datasheet PDF文件第2页浏览型号PUMD10T/R的Datasheet PDF文件第3页浏览型号PUMD10T/R的Datasheet PDF文件第4页浏览型号PUMD10T/R的Datasheet PDF文件第5页浏览型号PUMD10T/R的Datasheet PDF文件第6页浏览型号PUMD10T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PEMD10; PUMD10  
NPN/PNP resistor-equipped  
transistors;  
R1 = 2.2 kΩ, R2 = 47 kΩ  
Product data sheet  
2004 Apr 15  
Supersedes data of 2003 Nov 04  

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