Datasheet > PUMD10,125

PUMD10,125

更新时间： 2024-01-02 16:29:02

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	926K
描述
PEMD10; PUMD10 - NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ TSSOP 6-Pin

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技术参数
数据手册

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PUMD10,125 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TSSOP
针数：	6	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

PUMD10,125 数据手册

PEMD10; PUMD10

NPN/PNP resistor-equipped transistors;

R1 = 2.2 k, R2 = 47 k

Rev. 6 — 4 January 2012

Product data sheet

1. Product profile

1.1 General description

NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic

packages.

Table 1.

Product overview

Type number Package

NXP

PNP/PNP

NPN/NPN

Package

complement complement configuration

JEITA

PEMD10

PUMD10

SOT666

SOT363

PEMB10

PUMB10

PEMH10

PUMH10

ultra small and flat lead

very small

SC-88

1.2 Features and benefits

 100 mA output current capability

 Built-in bias resistors

 Reduces component count

 Reduces pick and place costs

 AEC-Q101 qualified

 Simplifies circuit design

1.3 Applications

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

1.4 Quick reference data

Table 2.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor (TR2) with negative polarity

V_CEO

I_O

collector-emitter voltage

output current

open base

100

2.86

k

bias resistor 1 (input)

bias resistor ratio

1.54

2.20

R2/R1

12 3 4 5 6 7...16

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