Datasheet > PTVA030121EAV1R250XTMA1

PTVA030121EAV1R250XTMA1

更新时间： 2024-11-30 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	874K
描述
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 â 450 MHz

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PTVA030121EAV1R250XTMA1 数据手册

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PTVA030121EA

Thermally-Enhanced High Power RF LDMOS FET

12 W, 50 V, 390 – 450 MHz

Description

The PTVA030121EA is an LDMOS FET characterized for use in

power ampliﬁer applications in the 390 MHz to 450 MHz frequency

band.Features include high gain and a thermally-enhanced package.

Manufactured with Inﬁneon's advanced LDMOS process, this device PTVA030121EA

provides excellent thermal performance and superior reliability.

Package H-36265-2

Features

CW Power Sweep

V_DD= 50 V, I_DQ= 30 mA, ƒ = 450 MHz

•ꢀ Unmatched input and output

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 1C (per ANSI/ESDA/

JEDEC JS-001)

•ꢀ High gain, low thermal resistance

•ꢀ Excellent ruggedness

Gain

•ꢀ Capable of withstanding a 13:1 load mismatch at

50 V, 12 W, CW conditions

•ꢀ Pb-free and RoHS compliant

Efficiency

3-1

Output Power (dBm)

RF Characteristics

CW Measurements

= 50 V, I

= 50 mA, P

= 12 W, ƒ = 450 MHz

OUT

Characteristic

Gain

Symbol

Gps

Min

Typ

Max

—

Unit

Drain Efficiency

h_D

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 05.1, 2016-04-19

12 3 4 5 6 7...10

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