Datasheet > PTVA035002EVV1R0

PTVA035002EVV1R0

更新时间： 2024-11-30 01:05:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1024K
描述
Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 â 450 MHz

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PTVA035002EVV1R0 数据手册

PTVA035002EV

Thermally-Enhanced High Power RF LDMOS FET

500 W, 50 V, 390 – 450 MHz

Description

The PTVA035002EV LDMOS FET is designed for use in power ampli-

ﬁer applications in the 390 MHz to 450 MHz frequency band.Features

include high gain and thermally-enhanced package with bolt-down

PTVA035002EV

Package H-36275-4

ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

Features

Pulsed CW Performance

450 MHz, V_D= 50 V, I_DQ= 0.5 A,

12 µsec pulse width, 10% duty cycle

•ꢀ Unmatched input and output

•ꢀ High gain and efﬁciency

•ꢀ Integrated ESD protection

•ꢀ Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

•ꢀ Low thermal resistance

Gain

•ꢀ Pb-free and RoHS-compliant

•ꢀ Capable of withstanding a 13:1 load

mismatch at 57 dBm under pulsed

Efficiency

a035002 gr

Output Power (dBm)

conditions: 12 µsec pulse width, 10% duty cycle

RF Characteristics

Pulsed CW Class AB Characteristics (not subject to production test, veriﬁed by design/characterization in Inﬁneon test ﬁxture)

= 50 V, I = 0.5 A, P = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle

OUT

Characteristic

Gain

Symbol

Min

—

Typ

Max

—

Unit

Drain Efficiency

h_D

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 05.2, 2016-06-08

12 3 4 5 6 7 8

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