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PTVA035002EV PDF预览

PTVA035002EV

更新时间: 2024-11-30 01:05:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1024K
描述
Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz

PTVA035002EV 数据手册

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PTVA035002EV  
Thermally-Enhanced High Power RF LDMOS FET  
500 W, 50 V, 390 – 450 MHz  
Description  
The PTVA035002EV LDMOS FET is designed for use in power ampli-  
fier applications in the 390 MHz to 450 MHz frequency band.Features  
include high gain and thermally-enhanced package with bolt-down  
PTVA035002EV  
Package H-36275-4  
flange. Manufactured with Infineon's advanced LDMOS process, this  
device provides excellent thermal performance and superior reliability.  
Features  
Pulsed CW Performance  
450 MHz, VD = 50 V, IDQ = 0.5 A,  
12 µsec pulse width, 10% duty cycle  
•ꢀ Unmatched input and output  
•ꢀ High gain and efficiency  
•ꢀ Integrated ESD protection  
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/  
22  
20  
18  
16  
14  
12  
10  
85  
75  
65  
55  
45  
35  
25  
JEDEC JS-001)  
•ꢀ Low thermal resistance  
Gain  
•ꢀ Pb-free and RoHS-compliant  
•ꢀ Capable of withstanding a 13:1 load  
mismatch at 57 dBm under pulsed  
Efficiency  
a035002 gr  
1
48  
50  
52  
54  
56  
58  
60  
Output Power (dBm)  
conditions: 12 µsec pulse width, 10% duty cycle  
RF Characteristics  
Pulsed CW Class AB Characteristics (not subject to production test, verified by design/characterization in Infineon test fixture)  
= 50 V, I = 0.5 A, P = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle  
V
DD  
DQ  
OUT  
Characteristic  
Gain  
Symbol  
Min  
Typ  
18  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
64  
%
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 05.2, 2016-06-08  

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