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PSHI50D/12 PDF预览

PSHI50D/12

更新时间: 2024-09-13 07:03:39
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 129K
描述
IGBT Module

PSHI50D/12 数据手册

 浏览型号PSHI50D/12的Datasheet PDF文件第2页浏览型号PSHI50D/12的Datasheet PDF文件第3页浏览型号PSHI50D/12的Datasheet PDF文件第4页 
ECO-PACTM 2  
PSHI 50D/12*  
IGBT Module  
IC25  
= 49 A  
Preliminary Data Sheet  
VCES  
= 1200 V  
VCE(sat)typ. = 3.1 V  
F10  
Short Circuit SOA Capability  
Square RBSOA  
A1  
H13  
S18  
P18  
N9  
NTC  
IGBTs  
PSHI 50D/12*  
Symbol  
VCES  
Conditions  
Maximum Ratings  
1200  
*NTC optional  
TVJ = 25°C to 150°C  
V
±
VGES  
20  
V
Features  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
49  
33  
A
A
NPT IGBT technology  
low saturation voltage  
low switching losses  
ICM  
VGE = ±15 V; RG = 47 ; TVJ = 125°C  
50  
A
µs  
W
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy parallelling  
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
10  
tSC  
VCE = VCES; VGE = ±15 V; RG = 47 ; TVJ = 125°C  
(SCSOA)  
non-repetitive  
MOS input, voltage controlled  
ultra fast free wheeling diodes  
solderable pins for PCB mounting  
package with copper base plate  
Isolation voltage 3000 V  
Ptot  
TC = 25°C  
208  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
UL registered, E 148688  
VCE(sat)  
IC = 50 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
3.1  
3.5  
3.7  
V
V
Advantages  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
space and weight savings  
reduced protection circuits  
package designed for wave  
soldering  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.1 mA  
4.2 mA  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
180 nA  
High power density  
Easy to mount with two screws  
t
100  
70  
ns  
ns  
td(on)  
Inductive load, TVJ = 125°C  
VCE = 600 V; I = 30 A  
tr  
500  
70  
ns  
TypicalApplications  
VGE = 15/0 V; CRG = 47 Ω  
tdf (off)  
Eon  
Eoff  
ns  
motor control  
4.6  
3.4  
mJ  
mJ  
- DC motor armature winding  
- DC motor excitation winding  
- synchronous motor excitation winding  
supply of transformer primary winding  
- power supplies  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
1.65  
nF  
RthJC  
RthJH  
(per IGBT)  
0.6 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
1.2  
- welding  
-X-ray  
- UPS  
- battery charger  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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