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PSHI75D/06 PDF预览

PSHI75D/06

更新时间： 2024-11-25 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 128K
描述
IGBT Module H-Bridge Configuration

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中文翻译

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PSHI75D/06 数据手册

 浏览型号PSHI75D/06的Datasheet PDF文件第2页浏览型号PSHI75D/06的Datasheet PDF文件第3页浏览型号PSHI75D/06的Datasheet PDF文件第4页 
TM  
ECO-PAC 2  
IGBT Module  
PSHI 75D/06*  
IC25  
= 69 A  
H-Bridge Configuration  
VCES  
= 600 V  
VCE(sat)typ. = 2.3 V  
Preliminary Data Sheet  
Short Circuit SOA Capability  
Square RBSOA  
F10  
A1  
H13  
S18  
P18  
N9  
NTC  
PSHI 75D/06*  
IGBTs  
*NTC optional  
Symbol  
VCES  
Conditions  
Maximum Ratings  
600  
Features  
•
•
•
•
•
•
NPT IGBT technology  
TVJ = 25°C to 150°C  
V
low saturation voltage  
±
VGES  
20  
V
low switching losses  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
69  
48  
A
A
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy parallelling  
ICM  
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C  
100  
A
µs  
W
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
•
•
•
•
•
•
MOS input, voltage controlled  
ultra fast free wheeling diodes  
solderable pins for PCB mounting  
package with copper base plate  
Isolation voltage 3000 V  
tSC  
VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C  
10  
(SCSOA)  
non-repetitive  
Ptot  
TC = 25°C  
208  
UL registered, E 148688  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Advantages  
min.  
typ. max.  
•
•
•
space and weight savings  
VCE(sat)  
IC = 75 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.8  
2.8  
V
V
reduced protection circuits  
package designed for wave  
soldering  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
•
•
High power density  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.8 mA  
4.4 mA  
Easy to mount with two screws  
Typical Applications  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
•
motor control  
t
50  
55  
ns  
ns  
td(on)  
- DC motor armature winding  
- DC motor excitation winding  
- synchronous motor excitation winding  
supply of transformer primary winding  
- power supplies  
Inductive load, TVJ = 125°C  
VCE = 300 V; I = 40 A  
tr  
300  
30  
ns  
VGE = 15/0 V; CRG = 22 Ω  
tdf (off)  
Eon  
Eoff  
ns  
•
1.8  
1.4  
mJ  
mJ  
- welding  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
2.8  
nF  
- X-ray  
- UPS  
RthJC  
RthJH  
(per IGBT)  
0.6 K/W  
K/W  
- battery charger  
with heatsink compound (0.42 K/m.K; 50 µm)  
1.2  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2003 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  
1234

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