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PSI25/06 PDF预览

PSI25/06

更新时间: 2024-09-15 07:03:39
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 280K
描述
IGBT Module

PSI25/06 数据手册

 浏览型号PSI25/06的Datasheet PDF文件第2页浏览型号PSI25/06的Datasheet PDF文件第3页浏览型号PSI25/06的Datasheet PDF文件第4页 
ECO-PACTM 2  
IGBT Module  
IC25  
VCES  
= 24.5 A  
= 600 V  
VCE(sat)typ. = 2.4 V  
PSIG 25/06  
PSI 25/06*  
PSIS 25/06*  
PSSI 25/06*  
Short Circuit SOA Capability  
Square RBSOA  
Preliminary Data Sheet  
LN9 S18 A1  
JK10  
PSIG  
P 9  
PSI  
L 9  
E 2  
PSI 25/06*  
PSIS 25/06*  
PSIG 25/06  
IGBTs  
PSSI 25/06*  
G 10  
X 13  
N T C  
X 15  
K 10  
X 16  
*NTC optional  
X 18  
Symbol  
VCES  
Conditions  
Maximum Ratings  
X 15  
NTC  
TVJ = 25°C to 150°C  
600  
20  
V
V
IK 10  
PSSI  
PSIS  
VGES  
RS 18  
X 16  
L 9  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
24.5  
17  
A
A
F 1  
AC 1  
A C 1  
ICM  
VCEK  
VGE = 15 V; RG = 68 ; TVJ = 125°C  
30  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 68 ; TVJ = 125°C  
10  
non-repetitive  
L 9  
T 16  
Ptot  
TC = 25°C  
82  
R S 18  
IK 10  
X 15  
N TC  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
X 16  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
VCE(sat)  
IC = 25 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.4  
2.9  
2.9  
V
V
VGE(th)  
ICES  
IC = 0.4 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.6 mA  
2.7 mA  
UL registered, E 148688  
IGES  
VCE = 0 V; VGE  
=
20 V  
100 nA  
Applications  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
30  
45  
ns  
ns  
AC and DC motor control  
AC servo and robot drives  
power supplies  
Inductive load, TVJ = 125°C  
VCE = 300 V; IC = 15 A  
VGE = 15/0 V; RG = 68 Ω  
270  
40  
ns  
ns  
welding inverters  
0.7  
0.5  
mJ  
mJ  
Advantages  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
8
nF  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
RthJC  
RthJH  
(per IGBT)  
1.52 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
3
High power density  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
Small and light weight  
Leads with expansion bend for  
stress relief  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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