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PSI75/12 PDF预览

PSI75/12

更新时间: 2024-09-16 10:00:31
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 199K
描述
IGBT Module

PSI75/12 数据手册

 浏览型号PSI75/12的Datasheet PDF文件第2页浏览型号PSI75/12的Datasheet PDF文件第3页浏览型号PSI75/12的Datasheet PDF文件第4页 
TM  
ECO-PAC 2  
IGBT Module  
IC25  
= 92 A  
PSIG 75/12  
PSI 75/12*  
PSIS 75/12*  
PSSI 75/12*  
AC 1  
VCES  
= 1200 V  
Preliminary Data Sheet  
VCE(sat)typ. = 2.7 V  
X15  
IK 10  
OP 9  
X13  
NTC  
L9  
L9  
T16  
X15  
E2  
GH 10  
NTC  
X15  
X16  
L9  
F1  
K10  
X16  
NTC  
VX 18  
IK 10  
AC 1  
X16  
PSIS 75/12*  
PSSI 75/12*  
PSI 75/12*  
IGBTs  
Symbol  
VCES  
Conditions  
Maximum Ratings  
A IJK  
S
LMN  
TVJ = 25°C to 150°C  
1200  
V
V
±
VGES  
20  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
92  
62  
A
A
ICM  
VGE = ±15 V; RG = 22 ; TVJ = 125°C  
100  
A
µs  
W
PSIG 75/12  
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
tSC  
VCE = VCES; VGE = ±15 V; RG = 22 ; TVJ = 125°C  
10  
(SCSOA)  
non-repetitive  
*NTC optional  
Ptot  
TC = 25°C  
379  
Features  
Symbol  
Conditions  
Characteristic Values  
Package with DCB ceramic  
base plate  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
VCE(sat)  
IC = 75 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.7  
3.0  
3.2  
6.5  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4.5  
V
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
3.7 mA  
UL registered, E 148688  
12.5 mA  
Applications  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
AC and DC motor control  
t
100  
70  
ns  
ns  
td(on)  
AC servo and robot drives  
power supplies  
welding inverters  
Inductive load, TVJ = 125°C  
VCE = 600 V; I = 60 A  
tr  
500  
70  
ns  
VGE = 15/0 V; CRG = 22 Ω  
tdf (off)  
Eon  
Eoff  
ns  
9.1  
6.7  
mJ  
mJ  
Advantages  
Easy to mount with two screws  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
3.3  
nF  
Space and weight savings  
Improved temperature and  
power cycling capability  
High power density  
RthJC  
RthJH  
(per IGBT)  
0.33 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
0.66  
Small and light weight  
Caution: These Devices are sensitive  
to electrostatic discharge. Users should  
observe proper ESD handling precautions.  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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