Datasheet > PSHM40-06

PSHM40-06

更新时间： 2024-11-25 06:05:35

品牌	Logo	应用领域
POWERSEM		/
页数	文件大小	规格书
2页	102K
描述
CoolMOS Power MOSFET

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中文翻译

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数据手册

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PSHM40-06 数据手册

ECO-PAC^TM2

CoolMOS Power MOSFET

I_D25

= 38 A

PSHM 40/06

V_DSS

= 600 V

in ECO-PAC 2

R_DSon= 70 mΩ

N-ChannelEnhancementMode

Low R_DSon, High V_DSSMOSFET

1 )

Package with Electrically Isolated Base

K12

NTC

K13

P18

R18

E10

F10

Preliminary Data Sheet

MOSFET

Features

Symbol

V_DSS

Conditions

Maximum Ratings

• ECO-PAC 2 with DCB Base

- Electrical isolation towards the

heatsink

T_VJ= 25°C to 150°C

600

±20

V_GS

I_D25

T_C= 25°C

T_C= 90°C

- Low coupling capacitance to the heatsink

for reduced EMI

I_D90

dv/dt

V_DS< V_DSS; I_F≤ 50A; di_F/dt ≤ 200A/µs

V/ns

- High power dissipation

- High temperature cycling capability

of chip on DCB

T_VJ= 150°C

E_AS

E_AR

I_D= 10 A; L = 36 mH; T_C= 25°C

1.8

- solderable pins for DCB mounting

I_D= 20 A; L = 5 µH; T_C= 25°C

• fastCoolMOSpowerMOSFET-2^ndgeneration

- High blocking capability

- Low on resistance

Symbol

Conditions

Characteristic Values

- Avalanche rated for unclamped

inductive switching (UIS)

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

70 mΩ

5.5 V

- Low thermal resistance

R_DSon

V_GSth

I_DSS

V_GS= 10 V;I_D= I_D90

V_DS= 20 V;I_D= 3 mA;

V_DS= V_DSS;V_GS= 0 V; T_VJ= 25°C

due to reduced chip thickness

3.5

25 µA

• Enhanced total power density

• UL registered, E 148688

T_VJ= 125°C

µA

I_GSS

V_GS= ±20 V; V_DS= 0 V

100 nA

Q_g

220

Applications

Q_gs

Q_gd

V_GS= 10 V; V_DS= 350 V; I_D= 50 A

125

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

t^d(on)

V_GS= 10 V; V_DS= 380 V;

t^r

100

I_D= 25 A; R_G= 1.8 Ω

t^d_f^(off)

• Inductive heating

V_F

(reverse conduction) I_F= 20 A;V_GS= 0 V

perMOSFET

0.9

1.1

0.45 K/W

R_thJC

Advantages

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power

cycling capability

Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated

• High power density

• Small and light weight

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

CoolMOS is a trademark of Infineon Technologies AG.

2003 POWERSEM reserves the right to change limits, test conditions and dimensions

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

中文翻译

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