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PSHM120D/01 PDF预览

PSHM120D/01

更新时间: 2024-11-25 07:03:39
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Power MOSFET

PSHM120D/01 数据手册

 浏览型号PSHM120D/01的Datasheet PDF文件第2页浏览型号PSHM120D/01的Datasheet PDF文件第3页浏览型号PSHM120D/01的Datasheet PDF文件第4页 
ECO-PACTM 2  
Power MOSFET  
ID25  
VDSS  
= 75 A  
PSHM 120D/01  
= 100 V  
in ECO-PAC 2  
RDSon = 25 mΩ  
N-ChannelEnhancementMode  
Highdv/dt, Lowtrr, HDMOSTM Family  
L4  
L6  
trr  
< 200 ns  
K12  
NTC  
K13  
L9  
P18  
R18  
F10  
Preliminary Data Sheet  
MOSFETs  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
100  
100  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGS  
Continuous  
Transient  
±20  
±30  
V
V
Features  
VGSM  
• HiPerFETTMtechnology  
- low RDSon  
ID25  
IDM  
IAR  
TC = 25°C  
75  
300  
75  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
- low gate charge for high frequency  
operation  
EAR  
TC = 25°C  
30  
5
mJ  
-unclampedinductiveswitching(UIS)  
capability  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
,
V/ns  
TJ 150°C, RG = 2 Ω  
-dv/dtruggedness  
PD  
Symbol  
TC = 25°C  
TestConditions  
300  
W
- fast intrinsic reverse diode  
• ECO-PAC 2 package  
- isolated back surface  
-enlargedcreepagetowardsheatsink  
-applicationfriendlypinout  
- low inductive current path  
- high reliability  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
100  
2.0  
V
VGS(th)  
4
V
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
- solderable pins for PCB mounting  
• UL registered, E 148688  
VDS = 0.8 • VDSS; TJ = 25°C  
250  
1
µA  
VGS = 0 V;  
TJ = 125°C  
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
25  
30  
mΩ  
Applications  
Pulse test, t < 300 µs, duty cycle d < 2%  
• drives and power supplies  
• battery or fuel cell powered  
• automotive, industrial vehicle etc.  
• secondary side of mains power  
supplies  
gfs  
VDS = 10 V; ID = ID25, pulse test  
25  
S
Ciss  
Coss  
Crss  
4500  
1600  
800  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
20  
60  
80  
60  
30  
110  
110  
90  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25  
td(off)  
tf  
RG = 2 , (External)  
Qg(on)  
Qgs  
180  
36  
260  
70  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25  
with heatsink compound (0.42 K/m.K; 50 µm)  
Qgd  
85  
160  
RthJC  
RthCK  
0.5 K/W  
K/W  
0.25  
Caution: These Devices are sensitive to electrostatic discharge. Users  
should observe proper ESD handling precautions.  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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