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ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. (晶豪) 更新时间：2023-01-02 18:19:05

晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司，于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务，并已于 2002 年 3 月在台湾证券交易所挂牌上市。

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型号	品牌	价格	文档	应用	描述

M12L128168A-7TIG2N	ESMT	获取价格		动态存储器光电二极管	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE

M11L416256A-35J	ESMT	获取价格		动态存储器光电二极管内存集成电路	EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, SOJ-40

M52D16161A-6TG2J	ESMT	获取价格		动态存储器光电二极管内存集成电路	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE

M12L2561616A-5BIG2S	ESMT	获取价格		动态存储器	Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS CO

F25L01PA-50HG	ESMT	获取价格		光电二极管	Flash, 1MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8

M13S64164A-6TVG2Y	ESMT	获取价格		动态存储器双倍数据速率光电二极管	DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-

M52D128168A-5BIG2E	ESMT	获取价格		动态存储器内存集成电路	Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54

M11L16161SA-60J	ESMT	获取价格		动态存储器光电二极管内存集成电路	EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, SOJ-42

M12L128168A-5TVG2N	ESMT	获取价格		动态存储器光电二极管内存集成电路	Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE,

F25L04PA-50PAG	ESMT	获取价格		光电二极管	Flash, 4MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8

M11L16161A-50J	ESMT	获取价格		动态存储器光电二极管内存集成电路	EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, SOJ-42

M11L1644A-60T	ESMT	获取价格		动态存储器光电二极管内存集成电路	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, TSOP2-26/24

M12L2561616A-6BIG2K	ESMT	获取价格		动态存储器内存集成电路	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD

M52D16161A-6BG2J	ESMT	获取价格		动态存储器内存集成电路	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 6.40 X 10.10 MM, 1 MM HEIGHT, 0.65 MM PITCH,

M13S2561616A-6BIG2S	ESMT	获取价格		动态存储器双倍数据速率	DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B

M12L128168A-7TVG2N	ESMT	获取价格		动态存储器光电二极管	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE

M12L32162A-5BG	ESMT	获取价格		动态存储器	Synchronous DRAM, 2MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, BGA-54

M12L2561616A-6BIG2A	ESMT	获取价格		动态存储器	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD

M13S64164A-4TVG2Y	ESMT	获取价格		动态存储器双倍数据速率光电二极管	DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-

F25L01PA-50DG	ESMT	获取价格		光电二极管	Flash, 1MX1, PDIP8, 0.300 INCH, 2.54 MM PITCH, ROHS COMPLIANT, PLASTIC, DIP-8

M12L128168A-6BIG2N	ESMT	获取价格		动态存储器	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F

M12L128168A-6BVAG2N	ESMT	获取价格		动态存储器	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F

M11B16161A-45J	ESMT	获取价格		动态存储器光电二极管	EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, SOJ-42

M11B1644SA-50J	ESMT	获取价格		动态存储器光电二极管	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, SOJ-26/24

M13S64164A-4BVG2Y	ESMT	获取价格		动态存储器双倍数据速率	DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE,

M13S128168A-5BVAG2N	ESMT	获取价格		动态存储器	Synchronous DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LE

M12L128168A-6BIG2L	ESMT	获取价格		动态存储器	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F

M12L64164A-6BIG2M	ESMT	获取价格		动态存储器	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F

F50L2G41LB	ESMT	获取价格			3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

F50L4G41XB-104RAG2X	ESMT	获取价格			3.3V 4 Gbit SPI-NAND Flash Memory