ESMT
F25L01PA
Flash
3V Only 1 Mbit Serial Flash Memory
with Dual Output
FEATURES
y
y
Single supply voltage 2.7~3.6V
Standard, Dual SPI
y
Erase
- Chip erase time 1 sec (typical)
- Block erase time 0.75 sec (typical)
- Sector erase time 90 ms (typical)
y
y
Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz; 86MHz; 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz
(100MHz / 172MHz equivalent Dual SPI)
y
y
Page Programming
- 256 byte per programmable page
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
Low power consumption
- Active current: 22 mA
- Standby current: 25μ A
y
y
End of program or erase detection
Write Protect ( WP )
- Deep Power Down current: 10μ A
y
y
Reliability
y
y
Hold Pin (HOLD )
- 100,000 typical program/erase cycles
- 20 years Data Retention
All Pb-free products are RoHS-Compliant
Program
- Page programming time: 1.5 ms (typical)
ORDERING INFORMATION
Product ID
Speed
Package
Comments
F25L01PA –50PG
F25L01PA –86PG
F25L01PA –100PG
F25L01PA –50PAG
F25L01PA –86PAG
F25L01PA –100PAG
F25L01PA –50SG
F25L01PA –86SG
F25L01PA –100SG
F25L01PA –50DG
F25L01PA –86DG
F25L01PA –100DG
F25L01PA –50HG
F25L01PA –86HG
F25L01PA –100HG
F25L01PA –50UG
F25L01PA –86UG
F25L01PA –100UG
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
8-lead
SOIC
150 mil
200 mil
Pb-free
8-lead
SOIC
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
8-pin
TSSOP
173 mil
(4.4mm)
8-pin
PDIP
300 mil
6x5 mm
2x3 mm
8-contact
WSON
8-contact
USON
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2013
Revision: 1.3 1/37