ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. (晶豪) 更新时间:2021-03-25 05:47:18
晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司,于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务,并已于 2002 年 3 月在台湾证券交易所挂牌上市。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
EN25P05-75GCP | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-75GC | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-75VIP | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-75VI | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-75VC | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-50VIP | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-75GI | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25P05-50GIP | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
M13S128324A-5BG2M | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率内存集成电路 | DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | |
M13S128324A-4BG2M | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率内存集成电路 | DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | |
M13S128324A-3.6BG2M | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率内存集成电路 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | |
M12L2561616A-5TG2A | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPL | |
M12L2561616A-7BG2A | ESMT | 获取价格 | ![]() |
动态存储器内存集成电路 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS | |
M12L2561616A-6TG2A | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM | |
M12L2561616A-6TIG2A | ESMT | 获取价格 | ![]() |
暂无描述 | ||
M12L2561616A-7TIG2A | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE | |
M12L2561616A-7BIG2A | ESMT | 获取价格 | ![]() |
动态存储器内存集成电路 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD | |
F25L04PA-86PG2D | ESMT | 获取价格 | ![]() |
时钟光电二极管内存集成电路 | Flash, 4MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | |
F25L04PA-100PAG2D | ESMT | 获取价格 | ![]() |
时钟光电二极管内存集成电路 | Flash, 4MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | |
M10B11664A-40T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | Fast Page DRAM, 64KX16, 40ns, CMOS, PDSO40, TSOP2-44/40 | |
M14D5121632A-3BIG2H | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率内存集成电路 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD | |
M14D5121632A-2.5BIG2H | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率内存集成电路 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F | |
EN25B16-100QC | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25B16-100FI | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25B16T-100FIP | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25B16-50HC | ESMT | 获取价格 | ![]() |
Flash Memory | ||
EN25B16-100HI | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN25B16-50HCP | ESMT | 获取价格 | ![]() |
Flash Memory | ||
EN25B16-50FCP | ESMT | 获取价格 | ![]() |
Flash Memory | ||
EN25B16-100FIP | ESMT | 获取价格 | ![]() |
Flash Memory, |
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