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F25L04PA-86PG2D PDF预览

F25L04PA-86PG2D

更新时间： 2024-01-20 09:30:47
品牌 Logo 应用领域
晶豪 - ESMT 时钟光电二极管内存集成电路
页数 文件大小 规格书
33页 328K
描述
Flash, 4MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8

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F25L04PA-86PG2D 技术参数

生命周期：Contact Manufacturer零件包装代码：SOIC
包装说明：0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8针数：8
Reach Compliance Code：unknown风险等级：5.74
最大时钟频率 (fCLK)：86 MHzJESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：4194304 words字数代码：4000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX1
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL编程电压：3 V
座面最大高度：1.75 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
类型：NOR TYPE宽度：3.9 mm
Base Number Matches：1

F25L04PA-86PG2D 数据手册

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ESMT  
F25L04PA (2D)  
Flash  
3V Only 4 Mbit Serial Flash Memory  
with Dual Output  
FEATURES  
Single supply voltage 2.3~3.6V  
Standard, Dual SPI  
Erase  
- Chip erase time 1 sec (typical)  
- Block erase time 0.15 sec (typical)  
- Sector erase time 30 ms (typical)  
Speed  
- Read max frequency: 33MHz  
- Fast Read max frequency: 50MHz; 86MHz; 100MHz  
- Fast Read Dual max frequency: 50MHz / 86MHz  
(100MHz / 172MHz equivalent Dual SPI)  
Page Programming  
- 256 byte per programmable page  
SPI Serial Interface  
- SPI Compatible: Mode 0 and Mode 3  
Low power consumption  
- Active current: 20 mA  
- Standby current: 25μ A  
End of program or erase detection  
Write Protect ( WP )  
- Deep Power Down current: 10μ A  
Reliability  
Hold Pin (HOLD )  
- 100,000 typical program/erase cycles  
- 20 years Data Retention  
All Pb-free products are RoHS-Compliant  
Program  
- Page programming time: 0.7 ms (typical)  
ORDERING INFORMATION  
Product ID  
Speed  
Package  
Comments  
F25L04PA –50PG2D  
F25L04PA –86PG2D  
F25L04PA –100PG2D  
F25L04PA –50PAG2D  
F25L04PA –86PAG2D  
50MHz  
86MHz  
100MHz  
50MHz  
86MHz  
8-lead  
SOIC  
150 mil  
200 mil  
6x5 mm  
Pb-free  
8-lead  
SOIC  
Pb-free  
Pb-free  
F25L04PA –100PAG2D 100MHz  
F25L04PA –50HG2D  
F25L04PA –86HG2D  
F25L04PA –100HG2D  
50MHz  
86MHz  
100MHz  
8-contact  
WSON  
GENERAL DESCRIPTION  
The F25L04PA is a 4Megabit, 3V only CMOS Serial Flash  
memory device. The device supports the standard Serial  
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory  
devices reliably store memory data even after 100,000  
programming and erase cycles.  
is divided into 128 uniform sectors with 4K byte each; 8 uniform  
blocks with 64K byte each. Sectors can be erased individually  
without affecting the data in other sectors. Blocks can be erased  
individually without affecting the data in other blocks. Whole chip  
erase capabilities provide the flexibility to revise the data in the  
device. The device has Sector, Block or Chip Erase but no page  
erase.  
The memory array can be organized into 2,048 programmable  
pages of 256 byte each. 1 to 256 byte can be programmed at a  
time with the Page Program instruction.  
The sector protect/unprotect feature disables both program and  
erase operations in any combination of the sectors of the  
memory.  
The device features sector erase architecture. The memory array  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Aug. 2012  
Revision: 1.4  
1/33  
1234567...33

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