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M13S64164A-4TVG2Y PDF预览

M13S64164A-4TVG2Y

更新时间: 2023-01-02 15:33:11
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器双倍数据速率光电二极管
页数 文件大小 规格书
49页 1219K
描述
DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

M13S64164A-4TVG2Y 数据手册

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ESMT  
DDR SDRAM  
Features  
M13S64164A (2Y)  
Automotive Grade  
1M x 16 Bit x 4 Banks  
Double Data Rate SDRAM  
z
Double-data-rate architecture, two data transfers per clock cycle  
z
Bi-directional data strobe (DQS)  
z
z
z
z
z
z
z
z
z
z
z
Differential clock inputs (CLK and CLK )  
DLL aligns DQ and DQS transition with CLK transition  
Four bank operation  
CAS Latency : 2, 2.5, 3  
Burst Type : Sequential and Interleave  
Burst Length : 2, 4, 8  
All inputs except data & DM are sampled at the rising edge of the system clock (CLK)  
Data I/O transitions on both edges of data strobe (DQS)  
DQS is edge-aligned with data for READs; center-aligned with data for WRITEs  
Data mask (DM) for write masking only  
VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V  
z
z
z
15.6us refresh interval for V grade; 3.9us refresh interval for VA grade  
Auto & Self refresh (self refresh is not supported for VA grade)  
2.5V I/O (SSTL_2 compatible)  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Oct. 2012  
Revision : 1.0 1/49  

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