ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. (晶豪) 更新时间:2023-02-26 15:08:00
晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司,于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务,并已于 2002 年 3 月在台湾证券交易所挂牌上市。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
M13S128324A-6BG2M | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率 | DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | |
M12L16161A-5TIG2Q | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | |
M13S128168A-4TVAG2N | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | Synchronous DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE | |
M13S32321A-5BG2G | ESMT | 获取价格 | ![]() |
动态存储器双倍数据速率 | DDR DRAM, 1MX32, 0.7ns, CMOS, PBGA144, FBGA-144 | |
M11L416256A-30T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | EDO DRAM, 256KX16, 30ns, CMOS, PDSO40, TSOP2-44/40 | |
M11B1644A-45J | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 4MX4, 45ns, CMOS, PDSO24, SOJ-26/24 | |
M12L2561616A-7BIG2S | ESMT | 获取价格 | ![]() |
动态存储器 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS | |
M11B1644SA-50T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, TSOP2-26/24 | |
F25L04UA-50CG | ESMT | 获取价格 | ![]() |
时钟光电二极管内存集成电路 | Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8 | |
EN25P05-50VC | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN29LV040A-70PIP | ESMT | 获取价格 | ![]() |
光电二极管内存集成电路 | Flash, 512KX8, 70ns, PDIP32, DIP-32 | |
EN25B16T-100QI | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
F25L01PA-100PG2D | ESMT | 获取价格 | ![]() |
光电二极管 | Flash, 1MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | |
M11B1644A-50T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, TSOP2-26/24 | |
EN25B16T-50QI | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
EN29LV160AT-70UC | ESMT | 获取价格 | ![]() |
光电二极管 | Flash, 1MX16, 70ns, PDSO44, SOP-44 | |
FM68D4G2GA-2.5BL | ESMT | 获取价格 | ![]() |
Memory Circuit, 64MX32, CMOS, PBGA162, BGA-162 | ||
F25L004A-100D | ESMT | 获取价格 | ![]() |
光电二极管内存集成电路 | Flash, 512KX8, PDIP8, | |
M11B16161SA-45J | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, SOJ-42 | |
F25L32QA-50HG2S | ESMT | 获取价格 | ![]() |
光电二极管 | Flash, 32MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | |
EN25B16T-75QC | ESMT | 获取价格 | ![]() |
Flash Memory, | ||
M11D1644SA-60T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, TSOP2-26/24 | |
M11B16161A-45T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, TSOP2-50/44 | |
M12L2561616A-5TIG2K | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | Synchronous DRAM, 16MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE | |
M11B16161SA-60T | ESMT | 获取价格 | ![]() |
动态存储器光电二极管 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, TSOP2-50/44 | |
M11L1644A-50J | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, SOJ-26/24 | |
F25L01PA-50PG | ESMT | 获取价格 | ![]() |
光电二极管 | Flash, 1MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | |
M13S128168A-5TVG2N | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | Synchronous DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE | |
M12L2561616A-7TG2A | ESMT | 获取价格 | ![]() |
动态存储器光电二极管内存集成电路 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COM | |
M13S128168A-5BIG2N | ESMT | 获取价格 | ![]() |
动态存储器 | Synchronous DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LE |
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