Datasheet > EN29LV160AT-70UC

EN29LV160AT-70UC

更新时间： 2023-01-03 01:26:14

品牌	Logo	应用领域
晶豪 - ESMT		光电二极管
页数	文件大小	规格书
44页	1435K
描述
Flash, 1MX16, 70ns, PDSO44, SOP-44

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EN29LV160AT-70UC 数据手册

EN29LV160A

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• 3.0V, single power supply operation

• JEDEC Standard program and erase

- Minimizes system level power requirements

commands

• High performance

• JEDEC standard DATA# polling and toggle

- Access times as fast as 70 ns

bits feature

• Low power consumption (typical values at 5

• Single Sector and Chip Erase

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1 µA standby current

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,

and thirty-one 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword

and thirty-one 32-Kword sectors (word mode)

• Triple-metal double-poly triple-well CMOS

Flash Technology

• Sector protection :

• Low Vcc write inhibit < 2.5V

- Hardware locking of sectors to prevent

program or erase operations within individual

sectors

• minimum 100K program/erase endurance

cycle

- Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

• Package Options

- 44-pin SOP

- 48-pin TSOP (Type 1)

- 48 ball 6mm x 8mm TFBGA

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

- Chip erase time: 17.5s typical

• Commercial and Industrial Temperature

Range

GENERAL DESCRIPTION

The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.

The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as

70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable

(WE#) controls, which eliminate bus contention issues. This device is designed to allow either

single Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain

a minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. I, Issue Date: 2008/07/17

12 3 4 5 6 7...44

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与EN29LV160AT-70UC相关器件

型号	品牌	获取价格	描述	数据表
EN29LV160AT-70UCP	ESMT	获取价格	Flash, 1MX16, 70ns, PDSO44, SOP-44
EN29LV160AT-70UI	ESMT	获取价格	Flash, 1MX16, 70ns, PDSO44, SOP-44
EN29LV160AT-70UIP	ESMT	获取价格	Flash, 1MX16, 70ns, PDSO44, SOP-44
EN29LV160AT-90BC	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AT-90BCP	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AT-90BI	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AT-90BIP	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AT-90TC	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AT-90TCP	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
EN29LV160AT-90TI	EON	获取价格	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

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