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M13S128168A-4TVAG2N PDF预览

M13S128168A-4TVAG2N

更新时间: 2024-09-25 07:07:51
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器光电二极管
页数 文件大小 规格书
49页 709K
描述
Synchronous DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

M13S128168A-4TVAG2N 数据手册

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ESMT  
DDR SDRAM  
Features  
M13S128168A (2N)  
Automotive Grade  
2M x 16 Bit x 4 Banks  
Double Data Rate SDRAM  
Double-data-rate architecture, two data transfers per clock cycle  
Bi-directional data strobe (DQS)  
Differential clock inputs (CLK and CLK )  
DLL aligns DQ and DQS transition with CLK transition  
Four bank operation  
CAS Latency : 2.5, 3, 4  
Burst Type : Sequential and Interleave  
Burst Length : 2, 4, 8  
All inputs except data & DM are sampled at the rising edge of the system clock (CLK)  
Data I/O transitions on both edges of data strobe (DQS)  
DQS is edge-aligned with data for READs; center-aligned with data for WRITEs  
Data mask (DM) for write masking only  
VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V  
15.6us refresh interval for V grade; 3.9us refresh interval for VA grade  
Auto & Self refresh (self refresh is not supported for VA grade)  
2.5V I/O (SSTL_2 compatible)  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2013  
Revision : 1.1 1/49  

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M13S128168A-5TG ESMT

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2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-5TG2N ESMT

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