ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. (晶豪) 更新时间:2023-05-02 07:06:39
晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司,于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务,并已于 2002 年 3 月在台湾证券交易所挂牌上市。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
F25L08QA-86PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L08QA-86HG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | ||
F25L08QA-50PG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L08QA-50PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L08QA-50HG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | ||
F25L08QA-100PG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L08QA-100PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L08QA-100HG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 8MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | ||
M13L128168A-4T | ESMT | 获取价格 | 时钟动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, | ||
M14D5121632A-2.5BG2A | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 | ||
M14D5121632A-2.5BBG2A | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 | ||
M14D5121632A-1.8BBG2A | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84, BGA-84 | ||
M52D128168A-7BG2E | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | ||
M52D128168A-6BG2E | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | ||
EN29LV400B-70BIP | ESMT | 获取价格 | 内存集成电路 | Flash, 256KX16, 70ns, PBGA48, FBGA-48 | ||
EN29LV400T-55RBCP | ESMT | 获取价格 | 内存集成电路 | Flash, 256KX16, 55ns, PBGA48, FBGA-48 | ||
FM67D4G2GA-5BH | ESMT | 获取价格 | 内存集成电路 | Memory Circuit, 64MX32, CMOS, PBGA137, BGA-137 | ||
M12L64164A-5BG2M | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F | ||
M12L64164A-7BG2M | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | ||
M12L64164A-6TG2M | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | ||
M12L64164A-6BG2M | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F | ||
M52S128168A-10BIG | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 | ||
M52S128168A-7TIG | ESMT | 获取价格 | 暂无描述 | |||
M52S128168A-10TIG | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | ||
M13S64164A-4TG2Y | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | ||
M13S64164A-6TG2Y | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | ||
M13S64164A-5BG2Y | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, | ||
M13S64164A-4BG2Y | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 4MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, | ||
M24L16161A-85BI | ESMT | 获取价格 | 动态存储器 | DRAM, | ||
M13S128168A-5TIG2N | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE |
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