ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. (晶豪) 更新时间:2021-06-09 18:10:06
晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司,于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务,并已于 2002 年 3 月在台湾证券交易所挂牌上市。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
M13S128168A-4TIG2N | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE | ||
M13S5121632A-5TG2A | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | ||
M13S5121632A-4TG2A | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | ||
M13S2561616A-6TIG2A | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | ||
M13S2561616A-6BIG2A | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B | ||
M13S2561616A-5TIG2A | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | ||
M13S2561616A-5BIG2A | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B | ||
M12L128324A-6BIG2E | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, FBGA-90 | ||
F25L16PA-86PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L16PA-86HG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | ||
F25L16PA-50PHG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO16, 0.300 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-16 | ||
F25L16PA-50PG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L16PA-50PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L16PA-86PHG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO16, 0.300 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-16 | ||
F25L16PA-86PG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L16PA-86DG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDIP8, 0.300 INCH, 2.54 MM PITCH, ROHS COMPLIANT, PLASTIC, DIP-8 | ||
F25L16PA-50HG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | ||
F25L16PA-50DG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDIP8, 0.300 INCH, 2.54 MM PITCH, ROHS COMPLIANT, PLASTIC, DIP-8 | ||
F25L16PA-100PHG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO16, 0.300 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-16 | ||
F25L16PA-100PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L16PA-100HG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8 | ||
F25L16PA-100DG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 16MX1, PDIP8, 0.300 INCH, 2.54 MM PITCH, ROHS COMPLIANT, PLASTIC, DIP-8 | ||
M52S16161A-6TG2J | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | ||
M52S16161A-10TG2J | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, | ||
M13S2561616A-6BIG2K | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE | ||
M13S2561616A-5TIG2K | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | ||
M13S2561616A-5BIG2K | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE | ||
M13S128168A-6TG2N | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | ||
M13S128168A-6BG2N | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, | ||
M13S128168A-4BG2N | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 8MX16, 0.6ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, |
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