ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. (晶豪) 更新时间:2022-03-13 15:36:47
晶豪科技股份有限公司 ( Elite Semiconductor Memory Technology Inc., ESMT) 为一专业 IC 设计公司,于 1998 年 6 月由赵瑚博士成立 , 总部设立于台湾之新竹科学工业园区。本公司主要业务包含 IC 产品之研究、开发、制造、销售及相关技术服务,并已于 2002 年 3 月在台湾证券交易所挂牌上市。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
M13S128168A-5TG2N | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | ||
M13S128168A-5BG2N | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, | ||
M13S128168A-4TG2N | ESMT | 获取价格 | 动态存储器双倍数据速率光电二极管内存集成电路 | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | ||
M12S16161A-7TG2Q | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, | ||
M12L64322A-6BIG2U | ESMT | 获取价格 | 动态存储器 | DRAM, | ||
M12L64322A-5TIG2U | ESMT | 获取价格 | 动态存储器 | DRAM, | ||
M12L64164A-7TIG2Y | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, | ||
M12L64164A-7BIG2M | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | ||
M12L64164A-6TIG2M | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | ||
M12L64164A-6BIG2Y | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F | ||
M12L64164A-5TIG2M | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | ||
M12L128168A-6TVG2N | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | ||
M12L128168A-6TIG2N | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | ||
M12L128168A-5BIG2N | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | ||
M12L128168A-5BIG2L | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F | ||
F25L32QA-86PAG2S | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 32MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8 | ||
F25L01PA-100SG2D | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 1MX1, PDSO8, 4.40 MM, 0.65 MM PITCH, ROHS COMPLIANT, TSSOP-8 | ||
F25L01PA-100SG | ESMT | 获取价格 | 时钟光电二极管内存集成电路 | Flash, 1MX1, PDSO8, 0.173 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSSOP-8 | ||
EN29LV160AT-90UIP | ESMT | 获取价格 | 光电二极管内存集成电路闪存 | Flash, 1MX16, 90ns, PDSO44, SOP-44 | ||
EN29LV160AT-70UIP | ESMT | 获取价格 | 光电二极管内存集成电路闪存 | Flash, 1MX16, 70ns, PDSO44, SOP-44 | ||
EN25F40A-104XIP | ESMT | 获取价格 | Flash Memory, | |||
M13S128324A-5BIG2M | ESMT | 获取价格 | 动态存储器双倍数据速率内存集成电路 | DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | ||
M13S128168A-6TVAG2N | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE | ||
M13S128168A-6BVG2N | ESMT | 获取价格 | 动态存储器内存集成电路 | Synchronous DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LE | ||
M12L32162A-5TG | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 2MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | ||
M12L2561616A-7TIG2K | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE | ||
M11L416256SA-40T | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, TSOP2-44/40 | ||
M11L416256SA-40J | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, SOJ-40 | ||
M11L16161SA-45J | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, SOJ-42 | ||
M11L16161A-60T | ESMT | 获取价格 | 动态存储器光电二极管内存集成电路 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, TSOP2-50/44 |
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