5秒后页面跳转
M11L16161SA-45J PDF预览

M11L16161SA-45J

更新时间: 2024-09-24 14:43:15
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 202K
描述
EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, SOJ-42

M11L16161SA-45J 技术参数

生命周期:Contact Manufacturer包装说明:SOJ, SOJ42,.44
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:N访问模式:EDO PAGE
最长访问时间:45 ns其他特性:SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-J42
长度:27.31 mm内存密度:16777216 bit
内存集成电路类型:EDO DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:42字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ42,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE电源:3.3 V
认证状态:Not Qualified刷新周期:1024
座面最大高度:3.68 mm自我刷新:YES
最大待机电流:0.002 A子类别:DRAMs
最大压摆率:0.15 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:10.06 mmBase Number Matches:1

M11L16161SA-45J 数据手册

 浏览型号M11L16161SA-45J的Datasheet PDF文件第2页浏览型号M11L16161SA-45J的Datasheet PDF文件第3页浏览型号M11L16161SA-45J的Datasheet PDF文件第4页浏览型号M11L16161SA-45J的Datasheet PDF文件第5页浏览型号M11L16161SA-45J的Datasheet PDF文件第6页浏览型号M11L16161SA-45J的Datasheet PDF文件第7页 
M11B16161A / M11B16161SA  
M11L16161A / M11L16161SA  
DRAM  
1M x 16 DRAM  
EDO PAGE MODE  
FEATURES  
ORDERING INFORMATION - PACKAGE  
X16 organization  
42-pin 400mil SOJ  
EDO (Extended Data-Out) access mode  
2 CAS Byte/Word Read/Write operation  
Single power supply :  
44 / 50-pin 400mil TSOP (TypeII)  
PACKING  
TYPE  
PRODUCT NO.  
Refresh Vcc  
5V ± 10% Vcc for 5V product  
3.3V ± 10% Vcc for 3.3V product  
Interface for inputs and outputs  
TTL-compatible for 5V products  
LVTTL-compatible for 3.3V products  
1024-cycle refresh in 16ms  
M11B16161A-45J/50J/60J  
M11B16161SA-45J/50J/60J  
M11L16161A-45J/50J/60J  
M11L16161SA-45J/50J/60J  
Normal  
5V  
*Self-  
Refresh  
SOJ  
Normal  
3.3V  
Self-  
Refresh modes :RAS only, CAS BEFORE RAS (CBR)  
and HIDDEN capabilities,  
Refresh  
M11B16161A-45T/50T/60T Normal  
Optional self-Refresh capabilities(S-ver. Only)  
JEDEC standard pinout  
Key AC Parameter  
5V  
*Self-  
M11B16161SA-45T/50T/60T  
Refresh  
TSOPII  
RAC  
45  
50  
60  
CAC  
11  
RC  
PC  
t
t
t
t
M11L16161A-45T/50T/60T  
Normal  
3.3V  
-45  
-50  
-60  
77  
84  
16  
20  
25  
Self-  
Refresh  
M11L16161SA-45T/50T/60T  
13  
15  
104  
* Ordered by special request  
GENERAL DESCRIPTION  
The M11B16161/M11L16161 series is a randomly accessed solid state memory, organized as 1,048,576 x 16 bits device. It  
offers Extended Data-Output access mode. Single power supply (5V± 10%, 3.3V ± 10%), access time (-45,-50,-60), self-  
refresh function and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before -  
RAS ,RAS -only refresh and Hidden refresh.  
Two access modes are supported by this device : Byte access and Word access. Use only one of the two CAS and leave  
the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH ) are used. CASL  
transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH transiting low will  
output or input data into the upper byte (IO8~15).  
PIN ASSIGNMENT  
SOJ Top View  
TSOP (TypeII) Top View  
VSS  
4 4  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
I/O5  
I/O6  
I/O7  
N C  
1
2
3
4
5
6
7
8
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
I/O5  
I/O6  
I/O7  
NC  
VSS  
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
I/O11  
I/O10  
I/O9  
I/O8  
N C  
1
2
3
4
5
6
7
8
4 2  
4 1  
4 0  
3 9  
3 8  
3 7  
3 6  
3 5  
3 4  
3 3  
3 2  
3 1  
3 0  
2 9  
2 8  
2 7  
2 6  
2 5  
2 4  
2 3  
2 2  
3
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
4
4 2  
4 1  
4 0  
3 9  
3 8  
3 7  
3 6  
3 5  
3 4  
I/O11  
I/O10  
I/O9  
9
1 0  
1 1  
9
I/O8  
N C  
1 0  
1 1  
1 2  
1 3  
1 4  
1 5  
1 6  
1 7  
1 8  
1 9  
2 0  
2 1  
N C  
CASL  
CASH  
OE  
A9  
N C  
N C  
WE  
RAS  
N C  
N C  
A0  
1 2  
1 3  
1 4  
1 5  
1 6  
17  
1 8  
1 9  
2 0  
2 1  
2 2  
NC  
3 3  
3 2  
3 1  
3 0  
2 9  
CASL  
CASH  
OE  
WE  
RAS  
NC  
A9  
N C  
A8  
A8  
28  
2 7  
2 6  
2 5  
2 4  
2 3  
A0  
A7  
A7  
A1  
A6  
A6  
A1  
A2  
A5  
A5  
A2  
A4  
A3  
A4  
A3  
VSS  
CC  
V
VCC  
V
S S  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2001  
Revision : 1.3 1/16  

与M11L16161SA-45J相关器件

型号 品牌 获取价格 描述 数据表
M11L16161SA-45T ESMT

获取价格

EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, TSOP2-50/44
M11L16161SA-50T ESMT

获取价格

EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, TSOP2-50/44
M11L16161SA-60J ESMT

获取价格

EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, SOJ-42
M11L1644A-45J ESMT

获取价格

EDO DRAM, 4MX4, 45ns, CMOS, PDSO24, SOJ-26/24
M11L1644A-50J ESMT

获取价格

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, SOJ-26/24
M11L1644A-50T ESMT

获取价格

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, TSOP2-26/24
M11L1644A-60T ESMT

获取价格

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, TSOP2-26/24
M11L1644SA-50J ESMT

获取价格

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, SOJ-26/24
M11L1644SA-50T ESMT

获取价格

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, TSOP2-26/24
M11L1644SA-60J ESMT

获取价格

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, SOJ-26/24