生命周期: | Contact Manufacturer | 包装说明: | TSOP2, |
Reach Compliance Code: | unknown | 风险等级: | 5.58 |
Is Samacsys: | N | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 4.5 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PDSO-G54 | 长度: | 22.22 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M12L64164A-5TIG2Y | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, |
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M12L64164A-6BG | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM |
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M12L64164A-6BG2C | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PBGA54, VBGA-54 |
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M12L64164A-6BG2M | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F |
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M12L64164A-6BG2Y | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks |
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M12L64164A-6BIG | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM |
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M12L64164A-6BIG2M | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F |
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M12L64164A-6BIG2Y | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F |
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M12L64164A-6TA | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM |
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M12L64164A-6TG | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM |
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